In this paper, we demonstrate high-performance lateral AlGaN/GaN Schottky barrier diodes (SBD) on Si substrate with a recessed-anode structure. The optimized rapid etch process provides results in improving etching quality 0.26-nm roughness of the anode recessed surface. By using high work function metal Pt as electrode, low turn-on voltage 0.71 V is obtained uniformity ±0.023 for 40 devices. S...

A SiC high-k (HK) split-gate (SG) MOSFET is proposed with a Schottky barrier diode (SBD) integrated between the split gates, and investigated by numerical TCAD simulation. Results show that it has same breakdown voltage as an optimized practical k value of 30 for its insulation pillar, which results in highest (1857 V). The forward (VF) reverse recovery charge (QRR) device are 0.9 V 3.49 μC/cm2...

GaAs Schottky diode particle detectors have been fabricated upon Low Pressure Vapour Phase Epitaxial GaAs. The devices were characterised with both electrical and charge collection techniques. The height of the Ti-GaAs barrier used was determined via two electrical methods to be 0.81 ± 0.005 and 0.85 ± 0.01 eV. The current density was greater than that expected for an ideal Schottky barrier and...

UNLABELLED Although organic-based direct conversion X-ray detectors have been developed, their photocurrent generation efficiency has been limited by recombination of excitons due to the intrinsically poor electrical properties of organic materials. In this report, we fabricated a polymer-based flexible X-ray detector and enhanced the X-ray detection sensitivity using a single-walled carbon nan...

Forty microampere current was generated on a platinum-titanium dioxide Schottky diode during the platinum catalyzed steady-state oxidation of carbon monoxide at 80 degrees C. For reaction events that produced four CO(2) molecules, three injected electrons were collected in a diode comprising a 5 nm thick platinum and a 150 nm titanium dioxide film. The electron injection flux depends on the thi...

The retrosection theorem says that any hyperbolic or Riemann surface can be uniformized by a Schottky group. We generalize this theorem to the case of hyperbolic 2-orbifolds by giving necessary and sufficient conditions for a hyperbolic 2-orbifold, in terms of its signature, to admit a uniformization by a Kleinian group which is a finite extension of a Schottky group. Equivalent^, the condition...

The irradiation effect of X-ray on the electrical properties Schottky-barrier diode (SBD) and metal-semiconductor field-effect transistors (MESFET) based surface conductivity hydrogen-terminated single-crystal diamond (SCD) epilayers was investigated. Ohmic contact formed by a Pd/Ti/Au multilayer Schottky metal Al thin film for fabrication SBDs MESFETs. performed with dose 100 kGy. It observed ...