The integration of graphene and other atomically flat, two-dimensional materials has attracted much interest and been materialized very recently. An in-depth understanding of transport mechanisms in such heterostructures is essential. In this study, vertically stacked graphene-based heterostructure transistors were manufactured to elucidate the mechanism of electron injection at the interface. ...

Among atomically thin two-dimensional (2D) materials, molybdenum disulfide (MoS2) is attracting considerable attention because of its direct bandgap in the 2H-semiconducting phase. On the other hand, a 1T-metallic phase has been revealed, bringing complementary application. Recently, thanks to top-down fabrication using electron beam (EB) irradiation techniques, in-plane 1T-metal/2H-semiconduct...

We present calculations of the bound state energy levels of anion vacancies near the surface of a III-V semiconductor. We consider the (110) surface of GaAs, InP, and the Ga1_xAlxAs alloy system. As the vacancy is moved toward the surface, the energy levels are only slightly perturbed until the vacancy reaches the second atomic layer from the surface. At this point, the anion vacancy levels mov...

Source/drain (S/D) series resistance components and device/process parameters contributing to series resistance are extensively analyzed using advanced model for future CMOS design and technology scaling into the nanometer regime. The total series resistance of a device is found to be very sensitive to the variations of the sidewall thickness, the doping concentration in the deep junction regio...

Using first principles calculations we investigate the structural and electronic properties of interfaces between fluorographane and MoS2. Unsymmetrical functionalization of graphene with H and F results in an intrinsic dipole moment perpendicular to the plane of the buckled graphene skeleton. Depending on the orientation of this dipole moment, the electronic properties of a physically absorbed...

The role of contact between semiconducting nanowire and metal electrodes in a single nanowire field effect transistor (NW-FET) is investigated for the sensing of different type of gases. Two different types of In(2)O(3) nanowire devices, namely; Schottky contact device (SCD) and Ohmic contact device (OCD) are evaluated. SCD has shown a superior response to the reducing gas (CO) compared to oxid...

The theory of tunnel current-voltage (I-V) characteristics of metal-semiconductor junctions based on the self-consistent solution of Poisson equation allows to get the Schottky-barrier height and the charged impurity concentration directly from the tunnel-ing data. This approach was applied to the analysis of the low temperature experiments on tunneling under pressure up to 3 GPa in a piston-cy...

Ballistic Electron Emission Microscopy (BEEM) and finite-element electrostatic modeling were used to quantify how “small-size” effects modify the energy barrier at metal/semiconductor nanostructure nanocontacts, formed by making Schottky contacts to cleaved edges of GaAs quantum wells (QWs). The Schottky barrier height over the QWs was found to systematically increase with decreasing QW width, ...

The quest for low power becomes highly compelling in newly emerging application areas related to wearable devices in the Internet of Things. Here, we report on a Schottky-barrier indium-gallium-zinc-oxide thin-film transistor operating in the deep subthreshold regime (i.e., near the OFF state) at low supply voltages (<1 volt) and ultralow power (<1 nanowatt). By using a Schottky-barrier at the ...

Metal-silicon junctions are crucial to the operation of semiconductor devices: aggressive scaling demands low-resistive metallic terminals to replace high-doped silicon in transistors. It suggests an efficient charge injection through a low Schottky barrier between a metal and Si. Tremendous efforts invested into engineering metal-silicon junctions reveal the major role of chemical bonding at t...