Because of the pressure of globalization in the last two decades, professional services has become an important strategic decision so that supplier selection is a prime concern. In the semiconductor industry, the prior researches worked on analyzing and improving the process, and evaluating the equipment manufacturers. Therefore, being the semiconductor industry applying a wide huge of advanced...

Prominent progress has been made in nitride semiconductor since high bright blue LED has developed in 1993. It has also expanded to an industry after applied to white LED. These LEDs are produced by the epitaxial growth of nitride semiconductor layers on sapphire (a Al2O3) substrate. On the other hand, recording density in optical disks has increased from CD in 1980s to DVD in latter 1990s. Las...

Silicon-on-insulator (SOI) wafers are nowadays being prominently used for the manufacture of new generation semiconductor devices. In order to maximize the device yield, the device industry is seeking SOI wafers that meet very stringent wafer specifications such as very low wafer bow and warp. An SOI wafer can undergo severe process-induced stresses during its manufacture leading to significant...

We report on tests of a compensated sapphire oscillator (CSO) which shows frequency-stable operation at temperatures above 77 K[1]. The frequency stability for this oscillator shows an apparent flicker floor of 7.5×10 for measuring times between 3 and 10 seconds, and stability better than 2×10 for all measuring times between 1 and 100 seconds. These values are approximately the same as for the ...

We report on the fabrication of 280-nm AlGaN-based deep-ultraviolet light-emitting diodes sUV LEDsd on sapphire substrates with an integrated microlens array. Microlenses with a diameter of 12 mm were fabricated on the sapphire substrate by resist thermal reflow and plasma dry etching. LED devices were flip-chip bonded on high thermal conductive AlN ceramic submounts to improve the thermal diss...

Heterojunction solar cells have potential for very high device voltages and currents, yet this relies on correct preparation of wafer surfaces prior to a-Si deposition. This paper investigates the preparation of wafer surfaces by NaOH texturing prior to amorphous silicon intrinsic layer deposition. It is found that with a CP etch or low temperature anneal after texturing, and with correct depos...