We study tunnel junctions consisting of a two-dimensional ferroelectric (FE) material sandwiched between graphene electrodes. formulate theory for the interplay FE polarization and induced free charges in such devices, taking into account quantum capacitance effects. predict gate-sensitive voltage difference across device, which can be measured using electrostatic force microscopy. Incorporatin...

A model for analyzing dynamic large-signal characteristics of double-barrier resonant-tunneling diodes (RTDs) is presented. The based on the analysis dynamical trajectories in phase space, defined by RTD bias and electron density quantum well. We show that an accurate can be reformulated approximate way, relying only a directly measurable DC I–V curve few other parameters, which could easily es...

We predict theoretically and observe in experiment that the differential conductance of a superconducting SET transistor exhibits a peak which is a complete analogue in a macroscopic system of a standard resonant tunneling peak associated with tunneling through a single quantum state. In particular, in a symmetric transistor, the peak height is universal and equal to e/2πh̄. Away from the resona...

Gate tunneling current in fully depleted, double-gate (DG) silicon-on-insultor (SOI) MOSFETs is characterized based on quantummechanical principles. The gate tunneling current for symmetrical DG SOI with ground-plane ( =1.5 nm and =5 nm) is shown to be higher relative to single-gate (bulk) MOS structure. The tunneling is enhanced as the silicon layer becomes thinner since the thinner silicon la...

The quantum Hall state at total filling factor ν(T)=1 in bilayer systems realizes an exciton condensate and exhibits a zero-bias tunneling anomaly, similar to the Josephson effect in the presence of fluctuations. In contrast to conventional Josephson junctions, no Fraunhofer diffraction pattern has been observed, due to disorder induced topological defects, so-called merons. We consider interla...

Fundamental oscillations up to 1.08 THz with the output power of 5.5 microwatts was achieved in GalnAs/AlAs resonant tunneling diodes (RTDs) at room temperature. The graded emitter, thin barriers, and high-indium-composition transit layers were introduced to reduce the tunneling and transit delays. The first two of these structures are the same as those in RTDs oscillating at 1.04 THz reported ...