نتایج جستجو برای: read sea

تعداد نتایج: 198118  

2012
SEWARD BRISBANE

G o o d l o o k i n g . 5 4 y e a r Old William Francis McDon­ ough wears horn-rimmed spec­ tacles, lias steel-gray eyes, talks In a soft, modest way, and is Unmarried. In his day Bill McDonough ^35 been a farmer’s son, soltlier, Merit Man and top execu­ tive of a big-time employees' Sroup. He likes to walk, play golf, and bowl. He once bowled 300, which is as thrilling as ̂ l^ole-in-one is to a...

Journal: :Inf. Process. Lett. 2001
Jaap-Henk Hoepman

On an atomic Read-Modify-Write (RMW) object one can read the complete old contents s of the object and simultaneously update its contents as a function δ(s) of the old contents in a single, indivisible, atomic operation. It is known that these RMW objects do not have a wait-free implementation in the asynchronous PRAM model—in which processors can only communicate with each other through atomic...

1997
Paul Roe

Reading and writing of data is fundamental in computing, as is its control. However control of reading and writing has traditionally only been available at the level of le systems, and not programming language data structures. In this paper a simple imperative language is described which uses type modes to control reading and writing of data. A type may be labelled read-write or read-only; a re...

Journal: :IEEE Trans. Computers 2002
Andreas Moshovos Gurindar S. Sohi

ÐWe observe that typical programs exhibit highly regular read-after-read (RAR) memory dependence streams. To exploit this regularity, we introduce read-after-read (RAR) memory dependence prediction. This technique predicts whether: 1) A load will access a memory location that a preceding load accesses and 2) exactly which this preceding load is. This prediction is done without actual knowledge ...

Journal: :Acta Universitatis Lodziensis. Folia Librorum 2017

This paper proposes a new sub-threshold low power 9T static random-access memory (SRAM) cell compatible with bit interleaving structure in which the effective sizing adjustment of access transistors in write mode is provided  by isolating writing and reading paths. In the proposed cell, we consider a weak inverter to make better write mode operation. Moreover applying boosted word line feature ...

نمودار تعداد نتایج جستجو در هر سال

با کلیک روی نمودار نتایج را به سال انتشار فیلتر کنید