This paper describes the Differential Pass Transistor Pulsed Latch (DPTPL) which enhances D-Q delay and reduce power consumption using NMOS pass transistors and feedback PMOS transistors. The proposed flip-flop uses the characteristic of stronger drivability of NMOS transistor than that of transmission gate if the sum of total transistor width is the same. Positive feedback PMOS transistors enh...

This letter presents a novel power switch structure using only low threshold voltage MOSFETs to extend the power switch to ultra-low voltage region. The proposed structure deploys seriesconnected low-Vth footers with two virtual ground ports and selectively chooses the logic cells for connecting to each virtual ground port according to the delay criticality. Moreover, additional circuitries are...

Through SPICE simulation, different piezoelectric harvester interface circuits are demonstrated and compared. In synchronized switch harvesting on inductor interface, the inductor’s quality factors are very important on calculating the harvested power so that the power from SSHIs depending on the inductor’s Q is calculated. Especially, parallel SSHI shows the optimal output voltage to harvest t...

We consider a twisted magnetic Laplacian with Neumann condition on a smooth and bounded domain of R2 in the semiclassical limit h → 0. Under generic assumptions, we prove that the eigenvalues admit a complete asymptotic expansion in powers of h1/4.

A thrust stand was modified, and a primary calibration technique was developed to evaluate the performance of applied-field pulsed magnetoplasmadynamic thrusters (MPDTs) for 10 kW class solar electric orbit transfer vehicle (SEOTV) missions. The NASA Lewis Research Center (LeRC) 30 kW thrust stand was modified to accept high current pulses delivered to the MPDT. A pendulum system was developed ...

A new approach for the electro-thermal modeling of LDMOSFETs for power-amplifier design that bypasses pulsed-IVs and pulsed-RF measurements is presented in this paper. The existence of low-frequency dispersion in LDMOSFETs is demonstrated by comparing pulsed IVs with iso-thermal IVs. The modeling technique uses iso-thermal IV and microwave measurements to obtain the temperature dependence of sm...