Single-crystal silicon carbide (SiC)-based pressure sensors can be used in harsh environments, as they exhibit stable mechanical and electrical properties at elevated temperatures. A fiber-optic pressure sensor with an all-SiC sensor head was fabricated and is herein proposed. SiC sensor diaphragms were fabricated via an ultrasonic vibration mill-grinding (UVMG) method, which resulted in a smal...

Metal assisted photochemical etching (MAPCE) of 4H Silicon Carbide (SiC) was utilized to generate locally defined porous areas on single crystalline substrates. Therefore, Platinum (Pt) was sputter deposited on 4H-SiC substrates and patterned with photolithography and lift off. Etching was performed by immersing the Pt coated samples into an etching solution containing sodium persulphate and hy...

We have used a two-dimensional drift-diffusion simulator, augmented by including accurate low-field mobility curves obtained by the Monte Carlo method, to study the operation of SiC MOSFETs both at room and high temperatures. A comparison with Si MOSFETs at room temperature is performed. Although drain current was higher in Si MOSFETs, SiC MOSFETs showed lower saturation conductance values. The...

Metal contact to SiC is not easy to modulate since the contact can be influenced by the metal, the termination of the SiC, the doping, and the fabrication process. In this work, we introduce a method by inserting a thin Al2O3 layer between metal and SiC to solve this problem simply but effectively. The Al2O3/n-SiC interface composition was obtained with X-ray photoemission spectroscopy, and the...

In this work, using Density Functional, Hartree-Fock and Extended H uckel Theories together with the supercell and cluster model approaches, we present our preliminary results for the simulation of the adsorption of Si and C atoms over the (111) SiC surfaces as well as the torsion of SiC molecules at that surfaces. Our results shown that, before and after the adsorption, the cubic structure ar...

OBJECTIVES An increased lung cancer risk associated with total dust exposure in the silicon carbide (SiC) industry has previously been reported. The aim of the present study was to examine the relative importance of specific exposure factors by using a comprehensive, historic job exposure matrix based on about 8000 measurements. METHODS Cumulative exposure to total and respirable dust, respir...

Silicon carbide (SiC) is the perfect cross between silicon and diamond. The crystal lattice of SiC is identical to silicon and diamond, but, exactly half the lattice sites are occupied by silicon atoms and half by carbon atoms. Likediamond SiC has electronic properties superior to silicon, but, unlike diamond it is also manufacturable. The thermal leakage current (dark current) in SiC is sixtee...