نتایج جستجو برای: plasma assisted cvd
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BACKGROUND Microalbuminuria and subsequent progression to proteinuria and nephropathy is associated with increased oxidative stress, increased inflammatory cytokines and increased cardiovascular (CVD) risk. The common functional IL-6 -174G>C gene variant is also associated with elevated levels of inflammatory cytokines and CVD risk. METHODS The aim of this study was to examine the association...
BACKGROUND Although low plasma 25-hydroxyvitamin D (25(OH)D) concentrations have been shown to predict risk of hypertension and associated cardiovascular disease (CVD), vitamin D repletion has not consistently lowered blood pressure or decreased CVD. One possibility for this discrepancy is the presence of considerable metabolic heterogeneity in patients with hypertension. To evaluate this possi...
An unusual phase of carbon with the fcc crystal structure, the lattice constant of which is very close to that of diamond, was reported before in a number of publications. In all the published works, the existence of fcc carbon could not be unambiguously established, as only insignificant amounts of fcc carbon in mixture with other carbon modifications were obtained so far. The present work pro...
Background: To evaluate the role of lipid markers including total cholesterol (TC), LDL-C and HDL-C vs. lipid indices (TC/HDL-C, LDL-C/HDL-C and non-HDL-C) as short term predictors of cardiovascular outcomes in adults over 30 years. Methods: As a nested case and control study, there were 207 CVD events among participants of Tehran Lipid and Glucose Study (TLGS) documented during 3 years of fol...
Renin, the renal pressor substance, was discovered and described by Tigerstedt and Bergman in classic experiments published in 1898. It was not, however, until 1934 that Goldblatt identified the relevance of renin by showing that renal secretion of renin caused sustained renovascular hypertension in dogs. Others subsequently demonstrated that renin itself is not the pressor element, but rather ...
The setup of an apparatus for chemical vapor deposition (CVD) of hexagonal boron nitride (h-BN) and its characterization on four-inch wafers in ultra high vacuum (UHV) environment is reported. It provides well-controlled preparation conditions, such as oxygen and argon plasma assisted cleaning and high temperature annealing. In situ characterization of a wafer is accomplished with target curren...
We introduce a new chemical vapor deposition (CVD) process that can be used to selectively deposit materials of many different types. The technique makes use of the plasmon resonance in nanoscale metal structures to produce the local heating necessary to initiate deposition when illuminated by a focused low-power laser. We demonstrate the technique, which we refer to as plasmon-assisted CVD (PA...
To improve the understanding on CNT growth modes, the various processes, including thermal CVD, MP-CVD and ECR-CVD, have been used to deposit CNTs on nanoporous SBA-15 and Si wafer substrates with C(2)H(2) and H(2) as reaction gases. The experiments to vary process parameter of DeltaT, defined as the vector quantities of temperature at catalyst top minus it at catalyst bottom, were carried out ...
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