Two-side surface photovoltage TS-SPV based on measuring SPV from both wafer sides is proposed as the approach for silicon iron contamination monitoring. TS-SPV is applied to follow diffusion of implanted iron in a lightly doped p-type silicon during rapid thermal anneal RTA . Good correlation is found between the iron distribution versus RTA conditions in the range of 375–1100 °C. The impact of...

This work puts forward the theoretical observation that open circuit voltage (V oc ) loss at illuminated wide band gap side of a PN heterostructure is directly proportional to discontinuity heterostructure. photovoltage an effect photocarrier confinement and cannot be detected device terminals as separate measurable voltage. Wrongly illuminating heterojunction solar cell results in excess build...

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We report on the intrinsic optoelectronic response of high-quality dual-gated monolayer and bilayer graphene p-n junction devices. Local laser excitation (of wavelength 850 nanometers) at the p-n interface leads to striking six-fold photovoltage patterns as a function of bottom- and top-gate voltages. These patterns, together with the measured spatial and density dependence of the photoresponse...

We have performed scanning photocurrent microscopy measurements of field-effect transistors (FETs) made from individual ultraclean suspended carbon nanotubes (CNTs). We investigate the spatial-dependence, polarization-dependence, and gate-dependence of photocurrent and photovoltage in this system. While previous studies of surface-bound CNT FET devices have identified the photovoltaic effect as...

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