نتایج جستجو برای: niti thin film

تعداد نتایج: 188876  

2015
Huan-Yi Cheng Ying-Chung Chen Pei-Jou Li Cheng-Fu Yang Hong-Hsin Huang

Resistors in integrated circuits (ICs) are implemented using diffused methods fabricated in the base and emitter regions of bipolar transistor or in source/drain regions of CMOS. Deposition of thin films on the wafer surface is another choice to fabricate the thin-film resistors in ICs' applications. In this study, Ni(55%)Cr(40%)Si(5%) (abbreviated as NiCrSi) in wt % was used as the target and ...

  The Boltzmann equation is a semiclassical approach to the calculation of the electrical conductivity. In this work we will first introduce a simple model for calculation of thin film resistivity and show that in an appropriate condition the resistivity of thin films depends on the electron mean free path, so that studying and measurement of thin films resistivity as a function of film thickne...

2017
Zafer Öztürk Matthias Filez Bert M Weckhuysen

The synthesis of metal-organic framework (MOF) thin films has garnered significant attention during the past decade. By better understanding the parameters governing the nucleation and growth of such thin films, their properties can be rationally tuned, empowering their application as (reactive) membranes. Here, a combined AFM-vibrational spectroscopy research strategy is employed to detail the...

2012
Neha Aggarwal Vijay Kumar Anand Kiran Walia C. Sood

Thin film of zinc oxide was prepared by spin coating on pyrex glass using zinc acetate dehydrate, 2methoxyethanol and monoethanolamine (MEA) as a precursor, solvent and stabilizer respectively. Also, Aluminium-doped thin film of ZnO was prepared by using AlCl3. Deposited thin films were investigated for structural and optical properties using X-ray diffraction (XRD) and UV–VIS-NIR spectrophotom...

2001
L. G. Cascão Pereira C. Johansson H. W. Blanch C. J. Radke

A thin-film balance employing either a Sheludko capillary or a Mysels-inspired porous-medium film holder provides a direct measurement of disjoining-pressure isotherms in free, liquid thin films. However, each film holder suffers its own distinct disadvantages spanning non-uniform and slow liquid exchange, a limited range of measurable disjoining pressures, an inability for reuse, and a require...

Journal: :Advanced materials 2014
Kwi-Il Park Jung Hwan Son Geon-Tae Hwang Chang Kyu Jeong Jungho Ryu Min Koo Insung Choi Seung Hyun Lee Myunghwan Byun Zhong Lin Wang Keon Jae Lee

A highly-efficient, flexible piezoelectric PZT thin film nanogenerator is demonstrated using a laser lift-off (LLO) process. The PZT thin film nanogenerator harvests the highest output performance of ∼200 V and ∼150 μA·cm(-2) from regular bending motions. Furthermore, power sources generated from a PZT thin film nanogenerator, driven by slight human finger bending motions, successfully operate ...

2009
Teppei Onuki Hiroki Kuwano

A thin film process using ECR-ion beam sputtering with ultra pure (99.999999%) copper target was investigated for improving transportation properties in the film. The electric resistivity of the thin film was 40% lower than that of using a commercial-grade purity target. And the optical qualities evaluated by the transmission and reflection spectrum measurements were also indicate slower relaxa...

2012
Jianqiao Huang Alan J. Laub James F. Davis Gerassimos Orkoulas

OF THE DISSERTATION Modeling and Control of Thin Film Surface Morphology: Application to Thin Film Solar Cells

2011
Seon Hoon Kim Seung Kim Doo Gun Kim Hyun Chul Ki Chul Hee Park Tae Un Kim Dong Kil Lee Won Gun Jang Jong Kim

We proposed optical gas sensors based on PLCs integrated with SnO2 thin films. SnO2 thin film was placed on the core layer appeared by removing the upper cladding layer of PLC. The propagation loss is analyzed using 2-D finite-difference time-domain method as a function of refractive index change of SnO2 thin film. The propagation loss of 0.18 dB was observed when the change of refractive index...

سلیمانی, محمد علی , فرجامی‌شایسته, صابر ,

In this paper, ferroelectric thin films, described by an ising model in a transverse field, have been studied under the mean-field approximation. We discuss a thin film composed of N-layer film of simple cubic symmetry with nearest-neighbor exchange in which the exchange strength and transverse field are assumed to be different from the bulk values in Ns surface layers, and we derive and illust...

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