Semiconducting molybdenum disulfphide has emerged as an attractive material for novel nanoscale optoelectronic devices due to its reduced dimensionality and large direct bandgap. Since optoelectronic devices require electron-hole generation/recombination, it is important to be able to fabricate ambipolar transistors to investigate charge transport both in the conduction band and in the valence ...

One of the major challenges towards scaling electronic devices to the nanometre-size regime is attaining controlled doping of semiconductor materials with atomic accuracy, as at such small scales, the various existing technologies suffer from a number of setbacks. Here, we present a novel strategy for controlled, nanoscale doping of semiconductor materials by taking advantage of the crystalline...

This paper explains the performance analysis of Gate-AllAround silicon nanowire with 80nm diameter field effect transistor based CMOS based device utilizing the 45-nm technology. Simulation and analysis of nanowire (NW) CMOS inverter show that there is the reduction of 70% in leakage power and delay minimization of 25% as compared with 180 nm channel length.Gate-All-Aorund (GAA) configuration p...

The ability to make electrical measurements inside cells has led to many important advances in electrophysiology. The patch clamp technique, in which a glass micropipette filled with electrolyte is inserted into a cell, offers both high signal-to-noise ratio and temporal resolution. Ideally, the micropipette should be as small as possible to increase the spatial resolution and reduce the invasi...

In this paper, we propose a leakage reduction technique. Because high leakage currents in deep submicron regimes are becoming a major contributor to total power dissipation of CMOS circuits. Sub threshold leakage current plays a very important role in power dissipation. So to reduce the sub threshold leakage current we proposed an adaptive voltage level (AVL) technique. Which optimize the overa...

This paper presents a novel device called Field Effect Photodiode (FEPD) to overcome the inherent drawbacks of PIN (PIN-PD) and control output photocurrent. Also, proposed PIN-PD can be applied as fast optical switch that provides desired ION/IOFF ratio for applications in nanoscale regime. The combines Metal Semiconductor Transistor (MESFET) regular convert incident light with photon energy gr...

With the fast-shrinking of transistor dimensions, low-frequency noise level considerably increases emerging as an important parameter for design advanced devices information technologies. Single-trap phenomena (STP) is a promising approach suppression technique in nanotransistor biosensors by considering trapping/detrapping signal. We show reduction mechanism offered STP nanoscale making analog...

W ith the recent introduction of dual-core processors, the wide-scale transition to parallel processing may have finally begun. How will multicore processing evolve and what will be the dominant computer architecture of the future? As technology reaches the limits of CMOS and beyond, the physical realities of computing hardware may dictate the answer to these questions. The integration level fo...

Spin-based logic devices could operate at very high speed with very low energy consumption and hold significant promise for quantum information processing and metrology. Here, an in-house developed, experimentally verified, ensemble self-consistent Monte Carlo device simulator with a Bloch equation model using a spin-orbit interaction Hamiltonian accounting for Dresselhaus and Rashba couplings ...