4H-SiC Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs) with embedded Schottky barrier diodes are widely known to improve switching energy loss by reducing reverse recovery characteristics. However, it weakens the static characteristics such as specific on-resistance and breakdown voltage. To solve this problem, in paper, an Asymmetric Split Gate MOSFET diode (ASG-MOSFET) is propose...

Efficiency is a large concern in power electronics but size and weight must be taken into consideration as well. Power devices in need of thermal sinks for appropriate performance will affect both size and weight. MOSFET devices are the main components in the power electronics world because of their comparatively promising characteristics in power loss and switching performance. The objective o...

In this paper, we have developed an explicit analytical drain current model comprising surface channel potential and threshold voltage in order to explain the advantages of the proposed Gate Stack Double Diffusion (GSDD) MOSFET design over the conventional MOSFET with the same geometric specifications that allow us to use the benefits of the incorporation of the high-k layer between the oxide l...

Background: Intracavitary brachytherapy plays a major role in management of cervical carcinoma. Assessment of dose received by OAR’s therefore becomes crucial for the estimation of radiation toxicities in HDR brachytherapy. Objective: Purpose of this study is to evaluate the role of in vivo dosimetry in HDR brachytherapy and to compare actual doses delivered to OAR’ s with those calculate...

In this paper, using the neural space mapping (NSM) concept, we present a SPICE-compatible modeling technique to modify the conventional MOSFET equations, to be suitable for ballistic carbon nanotube transistors (CNTTs). We used the NSM concept in order to correct conventional MOSFET equations so that they could be used for carbon nanotube transistors. To demonstrate the accuracy of our mod...

Power MOSFET technology has developed toward higher cell density for lower on-resistance. The super-junction device utilizing charge balance theory was introduced to semiconductor industry ten years ago and it set a new benchmark in the high-voltage power MOSFET market [1] . The Super-Junction (SJ) MOSFETs enable higher power conversion efficiency. However, the extremely fast switching performa...