Two-dimensional (2D) and three-dimensional (3D) magnetic cobalt nanowire thin films with tunable 3-10 nm wire diameters have been electrodeposited using mesoporous silica templates containing 2D hexagonal or 3D cubic pore channels. As compared to bulk cobalt films, the cobalt nanowire thin films exhibit enhanced coercivities and controllable magnetic anisotropy through tuning of the mesostructu...

Hybrid field-effect-transistors (FETs) with germanium nanowire (NW) arrays and organic gate dielectric are presented. The nanowire deposition steps are fully compatible with printed electronics route. NW FETs demonstrate good performance with On/Off ratios of ~10 and hole mobilities of ~13 cm/Vs in both nitrogen and air atmosphere. These results suggest that the hybrid nanowire FETs could be us...

Quantum confinement of carriers has a substantial impact on nanoscale device operations. We present electrical transport analysis for lithographically fabricated sub-5 nm thick Si nanowire field-effect transistors and show that confinement-induced quantum oscillations prevail at 300 K. Our results discern the basis of recent observations of performance enhancement in ultrathin Si nanowire field...

We demonstrate that a single sub-wavelength nanoaperture in a metallic thin film can be used to achieve dynamic optical trapping and control of a single dielectric nanowire. A nanoaperture can trap a nanowire, control its orientation when illuminated by a linearly polarized incident field, and rotate the nanowire when illuminated by a circularly polarized incident field. Compared to other desig...

Paper presents results of study aimed the tin dioxide nanowire gas sensing performance improvement via in situ functionalization with NiO. Developed nanostructures have demonstrated improved by order gas sensitivity toward H2 and CO and drastic increase of selectivity to H2 against CO. Obtained results are discussed from the point of view of NiO/SnO2 heterojunction formation and its influence o...

A novel vapor–liquid–solid epitaxy (VLSE) process has been developed to synthesize high-density semiconductor nanowire arrays. The nanowires generally are single crystalline and have diameters of 10–200nm and aspect ratios of 10–100. The areal density of the array can readily approach 10 cm . Results based on Si and ZnO nanowire systems are reported here. Because of their single crystallinity a...

We report the properties of a field effect transistor (FET) and a gas sensor based on CuO nanowires. CuO nanowire FETs exhibit p-type behavior. Large-scale p-type CuO nanowire thin-film transistors (10(4) devices in a 25 mm(2) area) are fabricated and we effectively demonstrate their enhanced performance. Furthermore, CuO nanowire exhibits high and fast response to CO gas at 200 degrees C, whic...

We demonstrate a bottom-up/top-down combined method for the fabrication of horizontally suspended, well-oriented and size-controlled Si nanowire arrays. Mechanical beamlike structures composed of multiple ordered arrays consecutively linked by transversal microspacers are obtained by this method. Such structures are used to investigate the mechanical elasticity of the nanowire arrays by atomic ...

silicon nanowire (sinw) arrays were produced by electroless method on polycrystalline si substrate, in hf/ agno3 solution. although the monocrystalline silicon wafer is commonly utilized as a perfect substrate, polycrystalline silicon as a low cost substrate was used in this work for photovoltaic applications. in order to study the influence of etching time (which affects the sinws length) on d...

In this paper, the internal structure of novel multiphase gallium nitride nanowires in which multiple zinc-blende and wurtzite crystalline domains grow simultaneously along the entire length of the nanowire is investigated. Orientation relationships within the multiphase nanowires are identified using high-resolution transmission electron microscopy of nanowire cross-sections fabricated with a ...