In an electronic device based on two dimensional (2D) transitional metal dichalcogenides (TMDs), finding a low resistance metal contact is critical in order to achieve the desired performance. However, due to the unusual Fermi level pinning in metal/2D TMD interface, the performance is limited. Here, we investigate the electronic properties of TMDs and transition metal oxide (TMO) interfaces (M...

The title compound, (C4H14N2)2[Mo2O4F6]·H2O, was obtained by solvothermal reaction at 443 K for 72 h from a mixture of MoO3, HF, 1,4-diamino-butane (dab), water and ethyl-ene glycol. The structure consists of [Mo2O4F6](4-) anionic dimers containing strongly distorted MoO3F3 octa-hedra (with twofold symmetry), diprotonated dab cations and water mol-ecules (twofold symmetry) in the ratio 1:2:1. T...

Silica core-shell nanoparticles of about 60-120 nm with a closed outer layer of bismuth or molybdenum oxide of 1-10 nm were synthesized by an integrated chemical vapor synthesis/chemical vapor deposition process at atmospheric pressure. Film growth rates and activation energies were derived from transmission electron microscopy (TEM) images for a deposition process based on molybdenum hexacarbo...

The local structure around the Ni atom has been studied by EXAFS and XANES spectroscopy in NiO-Moo3 Zeolite supported catalyst. Coordination, geometry and degree of dispersion of the NiO component has been determined for different concentrations of the active component.

Despite a favourable morphology, anodized and ordered TiO2 nanotubes are incapable of showing electrochromic properties in comparison to many other metal oxide counterparts. To tackle this issue, MoO3 of ~5 to 15 nm thickness was electrodeposited onto TiO2 nanotube arrays. A homogenous MoO3 coating was obtained and the crystal phase of the electrodeposited coating was determined to be α-MoO3. T...

Integration of conventional mid to long-wavelength infrared (IR) polarizers with chip-scale platforms is restricted by their bulky size and complex fabrication. Van der Waals materials based polarizer can address these challenges due its nonlithographic fabrication, ease integration platforms, room temperature operation. In the present work, mid-IR optical response sub-wavelength thin films ?-p...

The electrical properties of a device with an Al /Alq3/nanostructured MoO3 /Alq3 /p+-Si structure were investigated for organic resistance switching memories. The conductance of the device can be electrically switched to either high conductance or low conductance. The bistable switching of the device is attributed to the MoO3 nanoclusterlike layer interposed between the Alq3 thin films. When th...