Three-dimensional (3D) networks of carbon nanotubes (CNTs) were fabricated on a pillarpatterned substrate by plasma-enhanced chemical vapor deposition (PECVD). To fabricate 3D networks of CNTs, highly crystalline single-walled CNTs (SWCNTs) should be synthesize on the substrate. PECVD has advantages for low temperature growth and alignment of CNTs on the substrate, but it is difficult to synthe...

Cl2, Br2, HBr, Br2/Cl2, and HBr/Cl2 feed gases diluted in Ar (50%–50% by volume) were used to study etching of p-type Si(100) in a rf inductively coupled, Faraday-shielded plasma, with a focus on the photo-assisted etching component. Etching rates were measured as a function of ion energy. Etching at ion energies below the threshold for ion-assisted etching was observed in all cases, with Br2/A...

Evaluation of cytotoxicity, photoluminescence, bio-imaging, and sonosensitizing properties of silicon nanoparticles (SiNPs) prepared by ultrasound grinding of porous silicon nanowires (SiNWs) have been investigated. SiNWs were formed by metal (silver)-assisted wet chemical etching of heavily boron-doped (100)-oriented single crystalline silicon wafers. The prepared SiNWs and aqueous suspensions...

We have recently been able to grow single-walled carbon nanotubes by purely thermal chemical vapour deposition (CVD) at temperatures as low as 400 degrees C. This has been achieved by separating the catalyst pre-treatment step from the growth step. In the pre-treatment step, a thin film catalyst is re-arranged into a series of nano-droplets, which are then the active catalysts. Both steps have ...

We report on the large photoluminescence redshift observed in nanostructures fabricated using n-type GaN by ultraviolet (UV) metal-assisted electroless chemical-etching method. The scanning electron microscopy (SEM) characterization showed nanostructures with size dispersion ranging from 10 to 100 nm. We observed the crystalline structure using high resolution transmission electron microscopy (...

Well-ordered silicon nanowires (SiNWs) are applied as surface-enhanced Raman scattering (SERS) substrates. Laser interference lithography is used to fabricate large-area periodic nanostructures. By controlling the reaction time of metal assisted chemical etching, various aspect ratios of SiNWs are generated. Ag nanoparticles are decorated on the substrates via redox reaction to allow a good cov...

Vertically aligned p-type silicon nanowire (SiNW) arrays were fabricated through metal-assisted chemical etching (MACE) of Si wafers. An indium tin oxide/indium zinc oxide/silicon nanowire (ITO/IZO/SiNW) heterojunction diode was formed by depositing ITO and IZO thin films on the vertically aligned SiNW arrays. The structural and electrical properties of the resulting ITO/IZO/SiNW heterojunction...

Silicon nanowire arrays (SiNWs) are created utilizing the metal-assisted chemical etching method with an Ag metal as a catalyst and different time of 15, 30, 60 minutes using n-Si (100). Physical properties such structural, surface morphology, optical prepared SiNWs studied. The diameter ranged from 20 to 280 nm, reflectance in visible part wavelength spectrum was less than 1% for all samples. ...

The separation of chemical vapor deposited (CVD) graphene from the metallic catalyst it is grown on, followed by a subsequent transfer to a dielectric substrate, is currently the adopted method for device fabrication. Most transfer techniques use a chemical etching method to dissolve the metal catalysts, thus imposing high material cost in large-scale fabrication. Here, we demonstrate a highly ...

This paper reports inverted pyramid microstructure-based single-crystalline silicon (sc-Si) solar cell with a conversion efficiency up to 20.19% in standard size of 156.75 × 156.75 mm2. The inverted pyramid microstructures were fabricated jointly by metal-assisted chemical etching process (MACE) with ultra-low concentration of silver ions and optimized alkaline anisotropic texturing process. An...