BB-65 MeV ion implantation into InP compound semiconductor crystals with 5 MeV nitrogen ions has been investigated. The subsequent characterization was undertaken by a variety of techniques such as nuclear resonant reaction analysis, channeling Rutherford backscattering spectrometry, x-ray rocking curve measurement, and cross-sectional transmission electron microscopy. These techniques have cle...

Simplified beam line for low energy Ion implantation is considered. Compensation of the space charge of high perveance, low energy ion beam in beam lines for ion implantation and isotope separation has been investigated. Different mechanisms of the compensating particle formation such as ionization by the beam, secondary emission of electrons and negative ions, electronegative gas admixture, an...

The effects of cesium (Cs) ion-implantation on uncured and ultraviolet (UV)-cured plasmaenhanced chemical-vapor-deposited (PECVD) organosilicate low dielectric constant (low-k) (SiCOH) films have been investigated. The mechanical properties, including the elastic modulus and hardness, of the SiCOH low-k films are improved by up to 29.9% with Cs implantation, and further up to 51.8% after anneal...

General trends in integrated circuit technology toward smaller device dimensions, lower thermal budgets, and simplified processing steps present severe physical and engineering challenges to ion implantation. These challenges, together with the need for physically based models at exceedingly small dimensions, are leading to a new level of understanding of fundamental defect science in Si. In th...

Plasma Source Ion Implantation (PSII) is an emerging technology which can be used to harden metal surfaces in a conformal manner. North Star Research Corp. (NSRC) is building a unique implanter system for Empire Hard Chrome which will be the first truly commercial implanter of this type. The choice of pulsed power technology for this application is important from the standpoint of both reliabil...

The effects of Ti and O implantation on TiO2-x resistive switches are systemically investigated. The forming voltage drops monotonically with Ti implantation dose and forming vanishes completely at 10 ions/cm, whereas oxygen implantation causes a decrease and then increase in forming voltage. The ON/OFF current ratio becomes worse with high Ti implantation due to increased leakage currents thro...

We have measured the ion-channeling minimum yield (xmin) and angular width (C1/2) for Y, Ba, Cu, and O in 2000 Å ~001!-oriented films of YBa2Cu3O72d on MgO. The measurements mapped out a 30 K region around the critical temperature (Tc) in 1–2 K steps, and Tc was determined in situ. A O~a,a!O resonance was used to study the O motions. xmin increases and C1/2 decreases with increasing temperature...

Die Cochlea Implantation ist ein gut standardisierter Eingriff; Variabilität besteht jedoch hinsichtlich der Lage des Implantatgehäuses und somit der Position der Prozessorspule an der Kopfhaut. Eine zu kraniale Spulenposition kann beim Tragen von Kopfbedeckungen hinderlich sein und die Akzeptanz des Implantates beeinträchtigen; eine Position zu nahe an der Ohrmuschel zu einem Konflikt von Spul...

The dramatic impact of neurological degenerative pathologies in life quality is a growing concern. It is well known that many neurological diseases leave a fingerprint in voice and speech production. Many techniques have been designed for the detection, diagnose and monitoring the neurological disease. Most of them are costly or difficult to extend to primary attention medical services. Through...