The evolution of stress in silicon, induced by argon ion bombardment up to fluences of 4.5 · 10 ions/cm, is studied using molecular dynamics simulations with empirical interatomic potentials. A periodically replicated 5.43 nm cube with an exposed (001) surface models the sample of silicon. An interatomic force balance method computes stresses directly across planes in the cube. After every impa...

The damage processes involved in the penetration of an energetic ion in a crystalline solid are reviewed qualitatively. Different methods of studying the mechanisms of damage and defects created are described and the role of computer simulation in the comparison of theory and experiment is discussed.

Topography of silicon surfaces irradiated by a 2 MeV Si + ion beam at normal incidence and ion fluences in the range 10 15 − 10 16 ions/cm 2 has been investigated using scanning tunneling microscopy. At length scales below ∼ 50 nm, surface smoothing is observed; the smoothing is more prominent at smaller length scales. The smoothed surface is self-affine with a scaling exponent α = 0.53 ± 0.02....

Energetic ion bombardment during plasma etching of microelectronics devices is necessary to activate chemical process and define features through the ions’ anisotropic trajectories. These energetic fluxes can also cause damage and mixing of the constituents of crystalline lattices. These properties are likely best modeled using molecular dynamics (MD) simulations. The computational expense of t...

We calculate the evaporation of a cool accretion disk around a black hole due to the ion-bombardment by an ion supported accretion flow (here ISAF, or optically thin ADAF). As first suggested by Spruit & Deufel (2002), this evaporation takes place in two stages: ion bombardment of the cool disk (Shakura-Sunyaev disk: SSD) produces an intermediate-temperature layer on top of the disk ('warm laye...

We present new 4.5-5.1 micron (2210-1970 cm-1) spectra of embedded protostars, W33 A, AFGL 961 E, AFGL 2136, NGC 7538 IRS 9, and Mon R2 IRS 2, which contain a broad absorption feature located near 4.62 micron (2165 cm-1), commonly referred to in the literature as the "X-C triple bond N" band. The observed peak positions and widths of the interstellar band agree to within 2.5 cm-1 and 5 cm-1, re...

Microcrystalline growth regimes and solar cells obtained in different pressure and silane depletion conditions are studied in a large area KAI-S plasma reactor. The microcrystalline material quality is systematically investigated by Fourier Transform Photocurrent Spectroscopy (FTPS) to evaluate the defect density. It is shown that higher pressure and silane depletion positively affect the mater...

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Surface defects of a new type have been found on reconstructed Au(001) surfaces following 600-eV Ar+ ion bombardment. They appear as shallow areas 0.6 Å deep, one short period of the reconstruction (14.4 Å) wide. It is proposed that these defects are dislocation dipoles in the hexagonal reconstructed layer, originated by the collapse of surface vacancies. After higher ion doses, large patches o...

We report on the observation of fast hydrogen atoms in a capacitively coupled RF reactor by optical emission spectroscopy. For the analysis we use the prominent H emission line of atomic hydrogen in combination with other lines from molecular hydrogen and argon. Several characteristic emission structures can be identified. One of these structures is related to fast hydrogen atoms traveling from...