In this work, we propose a formation mechanism to explain the relationship between the surface morphology (and microstructure) and dislocations in the In0.82Ga0.18As/InP heterostructure. The In0.82Ga0.18As epitaxial layers were grown on the InP (100) substrate at various temperatures (430 °C, 410 °C and 390 °C) using low pressure metalorganic chemical vapor deposition (LP-MOCVD). Obvious protru...

We report an InP/InGaAs/InP double heterojunction bipolar transistor fabricated in a triplemesa structure, exhibiting simultaneous 404 GHz fτ and 901 GHz fmax. The emitter and base contacts were defined by electron beam lithography with better than 10 nm resolution and smaller than 20 nm alignment error. The base-collector junction has been passivated by depositing a SiNx layer prior to benzocy...

In-network processing (INP) is being used to cope with the large volume of data streams that need to be analyzed in real-time of data transmission rather than being stored and computed by powerful servers. In this paper, we combine the programmable switch OpenFlow with network virtualization and design the INP platform OFIAS, i.e., OpenFlow In A Slice. With the flexibility of OpenFlow and the s...

InAlAs/InGaAs Modulation-Doped Field-Effect Transistors (MODFETs) on InP have recently emerged as an optimum choice for a variety of microwave and photonics applications. This is because the outstanding transport properties of InGaAs have yielded devices with very low-noise and high-frequency characteristics. Unfortunately, the low breakdown voltage of InAlAs/InGaAs MODFETs on InP (typically le...

Tremendous increment in the high speed demands of data rate results in the continuous development in Type II InP/GaAsSb/InP Dual Heterojunction Bipolar Transistor Device. Physical based two dimensional device simulators, Atlas tool is used to study the DC operation and performance of InP/GaAsSb Dual Heterojunction Bipolar Transistor Device approaching Giga Hertz frequency range. Gallium Arsenid...

We present a calculation of the single top quark cross section for protonantiproton interactions with √ s = 1.8 TeV at the Fermilab Tevatron collider. We examine the effects of top mass, parton distribution functions, QCD scale, and collision energy, on each of the component production mechanisms, and study the kinematic distributions for standard model electroweak production. At the upgraded T...

Related Articles P(VDF-TrFE-CFE) terpolymer thin-film for high performance nonvolatile memory Appl. Phys. Lett. 102, 063103 (2013) Investigation of the near-surface structures of polar InN films by chemical-state-discriminated hard X-ray photoelectron diffraction Appl. Phys. Lett. 102, 031914 (2013) Effects of grain microstructure on magnetic properties in FePtAg-C media for heat assisted magne...

Subhadeep Datta,1 Shidong Wang,2 Carmen Tilmaciu,3 Emmanuel Flahaut,4 Laëtitia Marty,1 Milena Grifoni,5 and Wolfgang Wernsdorfer1 1Institut Néel, CNRS and Université Joseph Fourier, BP 166, F-38042 Grenoble Cedex 9, France 2Department of Mechanical Engineering and Materials Science, Duke University, Durham, North Carolina 27708, USA 3Université de Toulouse, UPS, INP, Institut Carnot Cirimat, 11...

Solid phosphorus is successfully incorporated into a molecular-beam epitaxy system by a valved-cracker for the growth of phosphorus-based materials. The operating parameters are established through beam flux and reflection high-energy electron diffraction measurements. InP and InGaP lattice matched to GaAs were grown and characterized by Hall measurements, photoluminescence, electroreflectance,...

Injection nerve palsy (INP) in the median nerve is an iatrogenic peripheral nerve injury that can be inflicted by a faulty intramuscular injection in the median nerve area. The literature reports a 2% incidence of INP among all peripheral nerve injuries. The incidence of INP in developed countries has decreased significantly during the past decade, but the injury appears to remain prevalent in ...