Broadband reduction of light reflection from the surface of InP wafers after high-temperature annealing in air has been observed. In the transparency region of the material, the reflection drop is accompanied by increasing transmission of light through the wafer. The spectral position of a deep minimum of the reflection coefficient can be tuned, by varying the temperature and the time of anneal...

Indium phosphide nanocrystals (InP NCs) with diameters ranging from 2 to 5 nm were synthesized with a scalable, flow-through, nonthermal plasma process at a rate ranging from 10 to 40 mg/h. The NC size is controlled through the plasma operating parameters, with the residence time of the gas in the plasma region strongly influencing the NC size. The NC size distribution is narrow with the standa...

Wedemonstrate opto-spintronics using Fe-doped IndiumPhosphide (InP). Themethod is based on optical orientation of InP conduction electron spinswhich are electrically detected in planar InP/ oxide/Ni tunnel spinfilters.We separate the optical excitation from electrical detection, avoiding thus additional interactions of photonswith the ferromagnet. Interface engineering provides a surface iron a...

Expressing proteins of interest as fusion to proteins of bacterial envelope is a powerful technique for biotechnological and medical applications. The synthetic gene (VacII) encoding for T-cell epitopes of selected genes of Mycobacterium tuberculosis namely, ESAT6, MTP40, 38 kDa, and MPT64 was fused with N- terminus of Pseudomonas syringae ice nucleation protein (INP) outer membrane protein. Th...

InGaAsP/InP multiple quantum wells with quantum well intermixing (QWI) have been prepared by Impurity-Free Vacancy Disordering (IFVD). The luminescent characteristics were investigated using photoluminescence (PL) and photoreflectance (PR), from which the band gap blueshift was observed. Si3N4, SiO2 and SOG (spin on glass) were used for the dielectric layer to enhance intermixing from the outdi...

In this work, we propose a formation mechanism to explain the relationship between the surface morphology (and microstructure) and dislocations in the In0.82Ga0.18As/InP heterostructure. The In0.82Ga0.18As epitaxial layers were grown on the InP (100) substrate at various temperatures (430 °C, 410 °C and 390 °C) using low pressure metalorganic chemical vapor deposition (LP-MOCVD). Obvious protru...

High-power 2.3m In(Al)GaAsSb–GaSb type-I double quantum-well diode laser arrays were fabricated and characterized. Linear laser arrays with 19 100m-wide elements on a 1-cm-long bar generated 10 W in continuous-wave (CW) mode and 18.5 W in quasi-CW mode (30 s/300 Hz) at a heatsink temperature of 18 C. Array power conversion efficiency peaked at 30 A and was about 9%. Device internal efficiency w...

We present a silicon integrated Heterostructure Barrier Varactor (HBV) frequency quintupler ( 5) operating between 440 GHz and 490 GHz. By epitaxial transfer of InP-based HBV material structure onto silicon-on-insulator (SOI), a uniform and accurate thickness (20 m) of the frequency quintupler chip is achieved. In a single stage this device delivers 2.8 mW of output power at 474 GHz, when pumpe...

We report an InP/InGaAs/InP double heterojunction bipolar transistor fabricated in a triplemesa structure, exhibiting simultaneous 404 GHz fτ and 901 GHz fmax. The emitter and base contacts were defined by electron beam lithography with better than 10 nm resolution and smaller than 20 nm alignment error. The base-collector junction has been passivated by depositing a SiNx layer prior to benzocy...