We fabricated InGaN/GaN nanorod light emitting diode (LED) on (-201) β-Ga2O3 substrate via the SiO2 nanosphere lithography and dry-etching techniques. The LED grown can effectively suppress quantum confined Stark effect (QCSE) compared to planar account of strain relaxation. With enhancement excitation power density, photoluminescence (PL) peak shows a large blue-shift for LED, while position s...

Dimming is an important and necessary feature for light sources used in general lighting applications. An experimental study was conducted to quantify the spectral and luminous efficacy change of high-power colored and pc-white LEDs under continuous current reduction (CCR) and pulse-width modulation (PWM) dimming schemes. For InGaN-based blue, green, and pc-white LEDs, the peak wavelength shift...

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Improvement of light extraction efficiency of InGaN light emitting diodes (LEDs) using polydimethylsiloxane (PDMS) concave microstructures arrays was demonstrated. The size effect of the concave microstructures on the light extraction efficiency of III-Nitride LEDs was studied. Depending on the size of the concave microstructures, ray tracing simulations show that the use of PDMS concave micros...

Ag nanoparticles are embedded in intentionally etched micro-circle p-GaN holes by means of a thermal agglomeration process to enhance the light absorption efficiency in InGaN/GaN multi-quantum-well (MQW) solar cells. The Ag nanoparticles are theoretically and experimentally verified to generate the plasmon light scattering and the localized field enhancement near the MQW absorption layer. The e...

Realization of phosphor-free white-light emitters is becoming an important milestone on the road to achieve high quality and reliability in high-power white-light-emitting diodes (LEDs). However, most of reported methods have not been applied to practical use because of their difficulties and complexity. In this study we demonstrated a novel and practical growth method for phosphor-free white-l...

In this work InGaN quantum dots (QDs) in GaN matrix formed during strain induced phase separation were investigated. We show that although electron – photon interaction rate in residual quantum well (QW) InGaN is high, carrier capture to QD levels and carrier escape from QD levels to the QW is slowed presumably due to large energy distance between the QD levels and between the QD levels and the...

The origin of high background electron concentration (n) in InxGa1−xN alloys has been investigated. A shallow donor was identified as having an energy level (ED1) that decreases with x (ED1 = 16 meV at x = 0 and ED1 = 0 eV at x ∼ 0.5) and that crossover the conduction band at x ∼ 0.5. This shallow donor is believed to be the most probable cause of high n in InGaN. This understanding is consiste...