نتایج جستجو برای: industrial units

تعداد نتایج: 315465  

2009
Masakazu OKAZAKI

The growing market for industrial gas turbines has led to an increased demand for large, cost-effective units of high efficiency, A critical issue in the development of such units is the durability of hot section components, especially first stage blades and vanes to which thermal barrier coatings (TBCs) are applied. This paper introduces the current state of the art in the production of TBCs, ...

2011
Manuel Toledano-Ayala Gilberto Herrera Ruiz Genaro M. Soto-Zarazúa Edgar A. Rivas-Araiza Rey D. Bazán Trujillo Rafael E. Porrás-Trejo

In this paper a long-range wireless mesh network system is presented. It consists of three main parts: Remote Terminal Units (RTUs), Base Terminal Units (BTUs) and a Central Server (CS). The RTUs share a wireless network transmitting in the industrial, scientific and medical applications ISM band, which reaches up to 64 Km in a single point-to-point communication. A BTU controls the traffic wit...

2009
Elvira Marie B. Aske Stig Strand Sigurd Skogestad

An industrial implementation of a coordinator MPC to maximize throughput at the large-scale K̊arstø gas plant is described. The “coordinator MPC” coordinates the flows through the network and not the local MPCs. It uses as degrees of freedom (MVs) the flows not used by the local MPCs (feeds, crossovers), and maximizes the throughput subject to the keeping the remaining capacities in all units ze...

In this paper energy intensity changes in industries of Iran as a whole and for each province separately have been calculated in the period of 2005-2019. These changes are divided to structural and efficiency effects by using average distribution on the amount of changes in cross method. The results show that during this period, energy intensity has increased throughout the country and in all p...

2013
R. Anzalone M. Camarda C. Locke J. Carballo N. Piluso G. D’Arrigo A. Severino A. A. Volinsky S. E. Saddow F. La Via

SiC is a candidate material for microand nano-electromechanical systems (MEMS and NEMS). In order to understand the impact that the growth rate has on the residual stress of CVDgrown 3C-SiC hetero-epitaxial films on Si substrates, growth experiments were performed and the resulting stress was evaluated. The film thickness was held constant at ~2.5 μm independent of the growth rate so as to allo...

Journal: :Dental materials journal 1996
O Miyakawa K Watanabe S Okawa M Kanatani S Nakano M Kobayashi

This study investigated the contamination of abraded Ti surfaces. Using a polishing machine, specimens were abraded with waterproof SiC grit papers under water cooling. The abraded surfaces were examined using element analysis, X-ray diffraction, and hardness tests. Contaminant deposits with dimensions reaching about 30 microns were observed throughout the surface. In these deposits, Ti was app...

2004
Jian-Shing Luo Wen-Tai Lin W. C. Tsai S. J. Wang

Thermal reactions of Co(200 A) /Si0,76Ge0,24( 1500 A) /Si and Co(200 A) /Si0,54Ge0,46( 1000 A) /Si systems in a vacuum of l2 X 10m6 Torr were studied. At temperatures above 200°C Ge segregation appeared even though no silicides and/or germanosilicides were formed. At a temperature of 225-550°C Co(Si, -vGe,) was formed, in which the Ge concentration was deficient. The formation temperatures of C...

2003
W. Zhou Z. M. Xu Wei Zhou

Composites based on two aluminium alloys (A536 and 6061) reinforced with 10% or 20% volume fraction of SiC particles were produced by gravity casting and a novel two-step mixing method was applied successfully to improve the wettability and distribution of the particles. The SiC particles were observed to be located predominantly in the interdendrit ic regions, and a thermal lag model is propos...

2016
M. Borowski W. Bolse J. Conrad

X-ray absorption spectroscopy on the Si k-edge was performed on a-Sic (6H) to monitor the evolution of the local structure around the Si atoms after ion bombardment. The samples were irradiated by 50 keV Na ions at fluences of 10" 10" ions/cma at a temperature of 80 K. EXAFS analysis clearly reveals that the hetero-atomic short range order of the crystalline matrix is almost completely conserve...

2014
Ivan Gueorguiev Ivanov Jawad Ul Hassan Tihomir Iakimov Alexei A. Zakharov Rositsa Yakimova Erik Janzén Ivan G. Ivanov

We report a simple, handy and affordable optical approach for precise number-oflayers determination of graphene on SiC based on monitoring the power of the laser beam reflected from the sample (reflectance mapping) in a slightly modified micro-Raman setup. Reflectance mapping is compatible with simultaneous Raman mapping. We find experimentally that the reflectance of graphene on SiC normalized...

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