The fluxless solderability of pure indium on gold-coated surfaces is investigated in this study using measurements of wetting angle and joint strength. This study focuses on the effects of indium s native oxides and those which form during heat treatment. The initial oxide thicknesses are obtained by heating indium samples at various temperatures, and then, during the reflow above the melting t...

The structure of the recently reported transparent conductor, Ga32xIn51xSn2O16 (0.3(x(1.6), was established by a combination of high-resolution electron microscopy, convergent-beam electron diffraction, and Rietveld analysis of powder diffraction data (X-ray and time-of-flight neutron methods). This ‘‘T-phase’’ compound has an anion-deficient fluorite-derivative structure whose space group is I...

While most of crystalline wide gap oxides are both stoichiometric and insulating, a handful of them including ZnO and In2O3 are naturally anion-deficient and electron conductors. Even fewer of the oxides are naturally cation-deficient and hole conductors, the arch-type of which is Cu2O. Based on first principles calculation of equilibrium nonstoichiometry and defect stability, we explain why th...

Functional 1D metal oxides have attracted much attention because of their unique applications in electronic, optoelectronic, and spintronic devices. For semiconducting oxide nanowires (NWs) (e.g., ZnO, In2O3, and SnO2 NWs), field-effect transistors and light-emitting diodes have been demonstrated. Metallic oxide nanoscale materials, such as nanoscale RuO2, can be good candidates as interconnect...

Ultrasensitive field-effect transistor-based biosensors using quasi-two-dimensional metal oxide semiconductors were demonstrated. Quasi-two-dimensional low-dimensional metal oxide semiconductors were highly sensitive to electrical perturbations at the semiconductor-bio interface and showed competitive sensitivity compared with other nanomaterial-based biosensors. Also, the solution process made...

In this work, the damage formation in InN layers has been investigated subsequent to europium implantation at 300 keV and room temperature. The layers of several microns were produced by Hydride Vapour Phase Epitaxy and used as matrices for ion implantation experiments due to their good crystalline quality. From this investigation, it is shown that InN exhibits a low stability under rare earth ...