Chest draining is a common procedure for treating pleural effusion. Perforation of the heart is a rare often fatal complication of chest drain insertion. We report a case of a 76-year-old female patient suffering from congestive heart failure. At presentation, unilateral opacity of the left chest observed on a chest X-ray was interpreted as massive pleural effusion, so an attempt was made to dr...

The effect of gate length on the operation of silicon-on-insulator (SOI) MOSFET structure with a layer of buried silicon oxide added to isolate the device body has been simulated. Three transistors with gate lengths of 100, 200 and 500 nm are simulated. Simulations show that with a fixed channel length, when the gate length is increased, the output drain current characteristics slope is increas...

One of the most important factors for appropriate performance of subsurface drainage systems is having adequate discharge for drains. For this purpose, knowledge about effect of drainage parameters change on drain discharge is essential in subsurface drainage systems. In this article, using change all of the drainage parameters by EnDrain software, changes of drains discharge has been investiga...

A 70-year-old man had undergone pancreaticoduodenectomy due to a distal common bile duct malignancy. After the operation, serous fluid discharge decreased from two drain tubes in the retroperitoneum. Over four weeks, the appearance of the serous fluid changed to a greenish bile color and the patient persistently drained over 300 ml/day. Viewed as bile leak at the choledochojejunostomy, treatmen...

The drain current-voltage (I-V) characteristics of Schottky-barrier carbon nanotube FETs are computed via a self-consistent solution to the 2-D potential profile, the electron and hole charges in the nanotube, and the electron and hole currents. These out-of-equilibrium results are obtained by allowing splitting of both the electron and hole quasi-Fermi levels to occur at the source and drain c...

We have carried out an experimental study revealing that velocity saturation (usat) occurring in both the extrinsic source and drain sets a fundamental limit on maximum drain current and useful gate swing in HFET’s. Using AlGaAsl n f InCaAs HFET’s as a vehicle, we find that first gm and eventually f~ decline at high currents in two stages. Initially, the approach of vsat in the extrinsic device...

This study was conducted to evaluate the performance of DRAINMOD /DRAINMOD-N on an experimental drainage field at Southeast Purdue Agricultural Center (SEPAC), based on the comparison between observed and predicted subsurface drain flows and nitrate-nitrogen losses via drainage. The site was under conventional drainage management, consisting of two replications of three tile drain spacings—5m, ...

Carrier scatterings in the inversion channel of MOSFET dominates the carrier mobility and hence drain current. This paper presents an analytical model of the subthreshold drain current incorporating the effective electron mobility model of the pocket implanted nano scale n-MOSFET. The model is developed by assuming two linear pocket profiles at the source and drain edges at the surface and by u...

Background/Introduction Pneumothorax can be a complication following chest drain removal. In thoracic surgery, access to the pleural cavity involves a pleurotomy. A chest drain is inserted to allow re-expansion of the lungs post-pleurotomy. This also prevents a tension pneumothorax. Some patients have a residual pneumothorax post-chest drain removal noted on chest radiography. Rates of pneumoth...

The effect of gate length and Thickness on the characteristic curve of drain-source current verse gate voltage in ZnO and GaAs MOSFETs have been simulated. Three transistors with gate lengths of 30, 40 and 50 nm are simulated. Simulations show that with a fixed channel length, when the gate length is increases, the output drain current would be increased, the Moreover, with increasing oxide Thi...