Abstract This paper presents the edge Transient Current Technique (eTCT) measurements of passive test-structures on UKRI-MPW0 pixel chip, a 280 µm thick proof-of-concept High Voltage-CMOS (HV-CMOS) device designed and fabricated in LFoundry 150 nm technology node with nominal substrate resistivity 1.9 kΩ cm. Samples were irradiated up to 1 × 10 16 MeV n eq cm −2 neutrons observe change depletio...