High indium content In0.86Al0.14As/In0.86Ga0.14As double heterojunction bipolar transistors (DHBTs) were grown on InP substrates using thin 6.0 Å metamorphic compositionally graded buffer layers. Good DC and RF characteristics have been demonstrated, with high gain (~30), breakdown voltage greater than 2.5 V, turn-on voltage reduction by a factor of two compared to existing InP bipolar technolo...

We give a summary of the state-of-the-art of heterostructure RF-device simulators for industrial application based on III-V compound semiconductors and compare critical modeling issues. Results from two-dimensional hydrodynamic simulations of High Electron Mobility Transistors (HEMTs) and Heterojunction Bipolar Transistors (HBTs) with MINIMOS-NT are presented. Simulation examples are chosen to ...

Solid source molecular beam epitaxy has been used to grow random alloy quaternary InAlAsSb and ternary InGaSb alloys with a 6.2 Å lattice constant for use in electronic devices such as p-n junctions and heterojunction bipolar transistors HBTs . Several p-n hetrojunctions composed of p-type InGaSb and one of several different n-type InAlAsSb alloys have been fabricated and show good rectificatio...

The growth of highly uniform, state-of-the-art InGaP/GaAs heterojunction bipolar transistors is demonstrated in a multi-wafer 6-inch configuration (AIX 2600). The uniformity of thickness, doping, composition, interface properties and minority carrier lifetime are assessed by electrical and structural characterization measurements, and shown to vary by less than ±3% across the wafer. The dc curr...

We give an overview of the state-of-the-art of heterostructure RF-device simulation for industrial application based on III–V compound semiconductors. The work includes a detailed comparison of device simulators and current transport models to be used, and addresses critical modeling issues. Results from two-dimensional hydrodynamic simulations of heterojunction bipolar transistors (HBTs) and h...

Multi-finger power SiGe heterojunction bipolar transistors (HBTs) with emitter ballasting resistor and non-uniform finger spacing are fabricated, and temperature profiles of them are measured. Experimental results show that both of them could improve the temperature profile compared with an HBT which has uniform finger spacing. For the HBT with emitter ballasting resistor, the ability to lower ...

A temperature prediction method of Insulated Gate Bipolar Transistor (IGBT) module based on autoregressive moving average model is proposed. Historical and current temperature datum of IGBT module is indispensable to the ARMA method, temperature time series is obtained by uniform sampling, and autoregressive (AR) model is constructed. Temperature time series prediction of IGBT module is realize...

Heterojunction Bipolar Transistors (HBTs) attract much industrial interest nowadays because of their capability to operate at high current densities [l]. AlGaAs/GaAs or InGaP/GaAs based devices are used for power applications in modern mobile telecommunication systems. Accurate simulations save expensive technological efforts to obtain significant improvements of the device performance. The two...

In this article, we report the effect of gamma irradiation on the DC characteristics of InGaP/GaAs single heterojunction bipolar transistors (SHBTs) based on the simulation with the extracted model parameters from experiment data before irradiation, after irradiation and after annealing. A simplified Vertical Bipolar Inter-Company (VBIC) static model is proposed to study the operational mechani...