A low-side switch is a MOSFET or an IGBT that is connected to the ground-referenced and is not floating. In a boost converter, the source terminal of the MOSFET is connected to the circuit ground, which is referred to a low-side MOSFET. To switch an N-channel MOSFET of a boost converter on, the V should be in the order of 10 to 20V. Since the source terminal is grounded, this implies that the g...

In this paper, the real-time IV measurement and TCAD simulation were used to study why the ESD performance of the HVT IO circuit is different from the ST NMOS device. The real-time IV measurement shows that top gate induced voltage of the ST NMOS in HVT IO circuit under ESD zapping event is much higher than the ST NMOS device. The simulation shows that high gate voltage will induce the c w e n ...

Identification of fault current during the operation of a power semiconductor switch and activation of suitable remedial actions are important for reliable operation of power converters. A short circuit is a basic and severe fault situation in a circuit structure, such as voltage-source converters. This paper presents a new active protection circuit for fast and precise clamping and safe shutdo...

The behavior of medium voltage commercial power MOSFETs, first degraded with increasing c-rays doses and subsequently irradiated with heavy ions, is presented. It is shown that the degradation of the gate oxide caused by the c irradiation severely corrupt the SEE robustness and drastically modify the physical behavior of the device under test after the impact of a heavy ion. A decrease of the c...

Electrical characteristics of GaAs metal–oxide–semiconductor field effect transistor with atomic layer deposition deposited Al2O3 gate dielectric have been investigated. The IV characteristics were studied after various constant voltage stress (CVS) has been applied. A power law dependence of the gate leakage current (Ig) on the gate voltage (Vg) was found to fit the CVS data of the low positiv...

In order to determine the Fermi level position of our devices, we first measured the resistance vs. applied gate voltage dependence of the graphene sheet that contained the nanoresonators, as shown in Fig. S1. From these measurements we were able to determine the charge neutral point (CNP) for each device, which corresponds to applied gate voltage that aligns the Fermi level of the graphene wit...

Photon storage with 250 ps rise time of the readout optical signal was implemented with indirect excitons in coupled quantum well !CQW" nanostructures. The storage and release of photons was controlled by the gate voltage pulse. The transient processes in the CQW were studied by measuring the kinetics of the exciton emission spectra after application of the gate voltage pulse. Strong oscillatio...

A novel 4-quadrant analog multiplier using Floating Gate MOS (FGMOS) transistors operating in saturation region are implemented. Floating gate MOSFETs are being utilized in a number of new and existing analog applications. These devices are not only useful for designing memory elements but also we can implement circuit elements. The main advantage in FGMOS is that the drain current is proportio...

The effects of gate dielectrics material in organic thin film transistors (OTFTs) were investigated. The gate dielectrics were deposited by plasma enhanced chemical vapor deposition (PECVD) with cyclohexane and tetraethylorthosilane (TEOS) respectively used as organic and inorganic precursors. The gate dielectrics (gate insulators) were deposited as either organic plasma-polymer or organic–inor...