Recent advances of the performance of GaN based devices with semipolar quantum wells have been realized homoepitaxially on pseudo bulk substrates which are typically small in size and high in cost. These limitations fuel the search for cheap and large area alternatives. Heteroepitaxial growth on sapphire substrates is well established with excellent results for polar GaN structures the growth o...

We present a methodology for the identification of transport parameters for Gallium Nitride (GaN) based semiconductor materials and devices. A Monte Carlo (MC) approach has been employed to investigate the electron transport in GaN and AlGaN, materials that are very important in device applications of high-power, high-frequency electronics. Our model is validated against measured data and compa...

Whispering gallery mode (WGM) cavities provide resonance configurations for light propagation through internal reflection, achieving high Q factors, low thresholds, and small volumes. GaN-based materials exhibit freedom in band engineering are highly compatible with contemporary semiconductor processing technology. Recently, lasers from artificial GaN microdisks, obtained by combining the excel...