Self-consistent-charge density-functional tight-binding ~SCC-DFTB! calculations have been performed to survey the potential-energy surface for a single interstitial carbon atom introduced into GaAs. The results provided a possible model for the diffusion of carbon through GaAs with an activation energy of less than 1 eV. The carbon atom moves via split-interstitial and bond-centered configurati...

Carbon-doped GaAs and InP grown at low temperatures by molecular-beam epitaxy contain a high concentration of antisite defects which gives rise to ultrafast carrier trapping time and desirable radiation-hard properties. The use of CBr4 as the dopant source introduced significant bromine incorporation during low-temperature ~LT! growth. Incomplete dissociation of the CBr4 molecules gives rise to...

725 Abstract—Infrared transmission images from GaAs semi insulating wafers were considered for years as directly related to the quantum absorption by electrons on fundamental states of deep centers, especially EL2. The satisfying correspondence of these images with the dislocations revealed by etching or X ray topography or infrared tomography led to the opinion that a strong concentration of E...

In recent years, the spin dynamics and spin–orbit interaction in GaAs-based two-dimensional hole systems (2DHS) have created a lot of attention. This is due to the complex structure of the valence band, with its p-like character, which leads to strong spin–orbit coupling. In this paper, we review our recent studies on hole spin dynamics and valence-band spin excitations in GaAs-based, p-modulat...

MeV ion irradiation effects on semiconductor crystals, GaAs(lOO) and Si (111) and on an insulating crystal CaF 2 (111) have been studied by the x-ray rocking curve technique using a double crystal x-ray diffractometer. The results on GaAs are particularly interesting. The strain developed by ion irradiation in the surface layers of GaAs <1go> ~aturates to a certain level after a high dose irrad...