The developed bio-field effect transistor (BioFET) consists in nano-silver ink printed source and drain electrodes, a polymeric organic semiconductor, dielectric layer based on methyl methacrylate (MMA) and finally the reference electrode of silver-silver chloride ink. The thickness of the dielectric layer was optimized and characterized by Scanning Electron Microscopy (SEM) and by electrical m...

Individual large-diameter ~;3 to 5 nm! semiconducting single-walled carbon nanotubes ~SWNTs! are found to exhibit ambipolar field-effect transistor ~FET! behavior, with easily accessible nand p-conduction channels by simple electrostatic gates. The effects of temperature and ultraviolet radiation on their electrical properties are elucidated, shedding light into the intrinsic behavior of SWNTs ...

A low-noise amplifier (LNA) uses low-loss monolithic transformer feedback to neutralize the gate–drain overlap capacitance of a field-effect transistor (FET). A differential implementation in 0.18m CMOS technology, designed for 5-GHz wireless local-area networks (LANs), achieves a measured power gain of 14.2 dB, noise figure (NF, 50 ) of 0.9 dB, and third-order input intercept point (IIP3) of+0...

We propose integrating graphene nanoribbons (GNRs) onto a substrate in an upright position whereby they are chemically bound to the substrate at the basal edge. Extensive ab initio calculations show that both nickel (Ni)- and diamond-supported upright GNRs are feasible for synthesis and are mechanically robust. Moreover, the substrate-supported GNRs display electronic and magnetic properties ne...

The advantages of organic field-effect transistors (OFETs), such as low cost, flexibility and large-area fabrication, have recently attracted much attention due to their electronic applications. Practical transistors require high mobility, large on/off ratio, low threshold voltage and high stability. Development of new organic semiconductors is key to achieving these parameters. Recently, organ...

We have measured conductance of single-walled semiconducting carbon nanotubes in field-effect transistor (FET) geometry and investigated the device response to alcoholic vapors. We observe significant changes in FET drain current when the device is exposed to various kinds of alcoholic vapors. These responses are reversible and reproducible over many cycles of vapor exposure. Our experiments de...

Sensitive and quantitative detection of tumor markers is highly required in the clinic for cancer diagnosis and consequent treatment. A field-effect transistor-based (FET-based) nanobiosensor emerges with characteristics of being label-free, real-time, having high sensitivity, and providing direct electrical readout for detection of biomarkers. In this paper, a top-down approach is proposed and...

Oxide semiconductors are of particular interest in the field integrated electronics due to their large-area fabrication, high uniformity, and superior performance. Here, we report an exceptionally sensitive photo-induced inverter device with linearity based on unipolar n-type channel material amorphous silicon indium zinc oxide (a-SIZO). The field-effect transistor (FET) a-SIZO exhibits maximum...

This paper reports a label-free field effect transistor (FET) sensor for the detection of DNA hybridization, which measures the surface potential on oligonucleotide modified electrodes using a direct charge accumulation method. The sensor directly and repeatedly transfers the charges that correspond to the surface potential induced by intrinsic negative charges in immobilized molecules, resulti...

This paper presents a current sensing principle appropriate for use in power electronics' converters. This current measurement principle has been developed for metal oxide semiconductor field effect transistor (MOS-FET) and is based on U(DS) voltage measurement. In practice, shunt resistors and Hall effect sensors are usually used for these purposes, but the presented principle has many advanta...