نتایج جستجو برای: field effect diode
تعداد نتایج: 2345893 فیلتر نتایج به سال:
A 1.9 microperveance beam diode has been constructed to test high current density cathodes for use in klystrons. Several standard and specially coated dispenser cathodes are being tested. Results of tests to date show average cathode current densities in excess of 25 amps/cm, and maximum electric field gradients of more than 450 kV/ cm. for pulses of the order of 1 /'sec.
We study the transport of vortices in superconductors with triangular arrays of boomerang- or V-shaped asymmetric pinning wells, when applying an alternating electrical current. The asymmetry of the pinning landscape induces a very efficient "diode" effect, that allows the sculpting at will of the magnetic field profile inside the sample. We present the first quantitative study of magnetic "len...
We study the transport of vortices in superconductors with square arrays of asymmetric pinning wells when applying an alternating electrical current. This system can induce a net rectifying or diode effect for the vortex motion, including collective stepmotor-type dynamics, where many vortices move forward a controlled and exact number of pin-latticespacings at each cycle of the AC driving forc...
A novel device n-MISISFET with a 'dielectric stack' instead of the single insulator of n-MOSFET has been described and its characteristics has been obtained in this paper. The desired variation of threshold voltage is obtained with biasing for the novel n-MISISFET for various substrate doping concentrations, the effect temperature variation on various electrical characteristics is stu...
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In this paper, a new photonic gated-diode method is proposed to extract the energy-dependent and the spatial distributions of interface states in metal-oxide-semiconductor field-effect transistors (MOSFETs). For the photonic current-voltage (I-V) characterization of MOSFETs, an optical source with a photon energy less than the silicon bandgap (hν = 0.95 eV < Eg = 1.12 eV) is employed for the ch...
In the Gunn effect, which occurs in certain semiconductors in strong electric fields, electrons are driven out of a low-mass central valley into a heavy-mass side valley in k (momentum) space, ultimately resulting in negative differential resistance (NDR). Recently, there has been interest in the possibility of exploiting this phenomenon in heterostructured semiconductors, as a means to realize...
Currently, the superconducting diode effect (SDE) is being actively discussed, due to its large application potential in electronics. In particular, hybrid structures, based on three-dimensional (3D) topological insulators, are among best candidates, their having strongest spin–orbit coupling (SOC). Most theoretical studies SDE focus either a full numerical calculation, which often rather compl...
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