An extended-gate field-effect-transistor (FET) sensor with a gold-sensing electrode, to which a gold-thiol bond could easily be applied, was developed for DNA detection. Because the gold electrode is located in a different area from the FET, it can be operated without a light-shielding box by masking only the FET. However, when the FET sensor is used in an aqueous solution, fluctuation of the i...

BACKGROUND The use of assisted reproductive technology (ART) is increasing in the world. The rate, efficacy and safety of ART are very different among countries. There is an increase in the use of intra cytoplasmic sperm injection (ICSI), single fresh embryo transfer (ET) and frozen-thawed embryo transfer (FET). OBJECTIVE The objective of this study was to compare pregnancy rate in fresh ET a...

The advancement and challenges of field effect transistors are based on multi-gate from the perspective structure material. Multi-gate field-effect (Multi-gate FET) have steeper sub-threshold slopes, which can reduce short channel improve mobility drive current. A fin transistor (FinFET) gate-all-around (GAAFET) attractive structures most compatible with today’s standard machining technologies....

As continuous geometric scaling of conventional metal oxide semiconductor field effect transistors(MOSFETs) are facing many fundamental challenges, therefore, new alternatives has to be introduced to provide high performance integrated chips. This paper gives insight on various recent innovations in device engineering for microelectronics and nanoelectronics. The recent developments are mainly ...

In this paper, we present a physics-based analytical model of GNR FET, which allows for the evaluation of GNR FET performance including the effects of line-edge roughness as its practical specific non-ideality. The line-edge roughness is modeled in edge-enhanced band-to-band-tunneling and localization regimes, and then verified for various roughness amplitudes. Corresponding to these two regime...

The development of field-effect transistor-based (FET-based) non-volatile optoelectronic memories is vital toward innovations necessary to improve computer systems. In this work, for the first time, unique charge-trapping and charge-retention properties solution-processed colloidal nitrogen-doped carbon quantum dots (CQDs) are harnessed achieve functional programmable by UV illumination with a ...

UNLABELLED Many low-grade gliomas (World Health Organization grade II) respond to chemotherapy. Cerebral blood flow (CBF) and microvessel density may be critical for drug delivery. We used PET with (18)F-fluoro-ethyl-l-tyrosine (FET) to measure the spatial distribution of the amino acid carrier, which is located at the brain capillaries, and (15)O-H(2)O to measure tumor CBF. METHODS Seventeen...

Gastric cancer (GC) is the second leading cause of cancer-related deaths all over the world. miR-106a is a circulatory oncogenic microRNA (miRNA), which overexpresses in various malignancies, especially in GC. In this study, an ultrasensitive electrochemical nanobiosensor was developed for the detection of miR-106a using a double-specific probe methodology and a gold-magnetic nanocomposite as t...

Field-effect transistors (FETs) based on [6]phenacene thin films were fabricated with SiO2 and parylene gate dielectrics. These FET devices exhibit field-effect mobility in the saturation regime as high as 7.4 cm(2) V(-1) s(-1), which is one of the highest reported values for organic thin-film FETs. The two- and four-probe mobilities in the linear regime display nearly similar values, suggestin...