نتایج جستجو برای: feconi nanowires
تعداد نتایج: 14689 فیلتر نتایج به سال:
We report on bifurcate reactions on the surface of well-aligned Si(1-x)Ge(x) nanowires that enable fabrication of two different coaxial heterostructure nanowires. The Si(1-x)Ge(x) nanowires were grown in a chemical vapor transport process using SiCl(4) gas and Ge powder as a source. After the growth of nanowires, SiCl(4) flow was terminated while O(2) gas flow was introduced under vacuum. On th...
It is believed that the failure mode of metal nanowires under tensile loading is the result of the nucleation and propagation of dislocations. Such failure modes can be slip, partial slip or twinning and therefore they are regarded as local deformation. Here we provide numerical and theoretical evidences to show that global deformation is another predominant failure mode of nanowires under tens...
Molecular beam epitaxy growth of GaN and InGaN nanowires is accomplished on Si (111) substrates using Ga-droplet nucleation. Typical diameters range from 25-80 nm and lengths can be varied by increasing the growth time; the growth rate is ~0.25 microns/hour. The nanowires have been characterized structurally and optically. Photoluminescence spectra show band-edge emission of GaN nanowires cente...
SnO2 nanowires were prepared on bare oxidized silicon, Au and SnO2 coated substrates by thermal evaporation of tin grains in argon atmosphere at 900°C. X-ray diffraction (XRD) and field-emission scanning electron microscopy (FE-SEM) were used to characterize the SnO2 nanowires. FE-SEM images indicated that the size of SnO2 nanowires depend on the type of substrate. Gas sensor was fabricated by ...
The electrodeposition at room temperature of silicon and germanium nanowires from the airand water-stable ionic liquid 1-butyl-1-methylpyrrolidinium bis(trifluoromethanesulfonyl)imide (P1,4) containing SiCl4 as Si source or GeCl4 as Ge source is investigated by cyclic voltammetry. By using nanoporous polycarbonate membranes as templates, it is possible to reproducibly grow pure silicon and germ...
This chapter provides an overview of recent research on inorganic nanowires, particularly metallic and semiconducting nanowires. Nanowires are one-dimensional, anisotropic structures, small in diameter, and large in surfaceto-volume ratio. Thus, their physical properties are different than those of structures of different scale and dimensionality. While the study of nanowires is particularly ch...
The synthesis of nanowires has advanced in the last decade to a point where a vast range of insulating, semiconducting, and metallic materials1 are available for use in integrated, heterogeneous optoelectronic devices at nanometer scales 2. However, a persistent challenge has been the development of a general strategy for the manipulation of individual nanowires with arbitrary composition. Here...
ZnO nanowires have been successfully fabricated on Si substrate by simple thermal evaporation of Zn powder under air ambient without any catalyst. Morphology and structure analyses indicated that ZnO nanowires had high purity and perfect crystallinity. The diameter of ZnO nanowires was 40 to 100 nm, and the length was about several tens of micrometers. The prepared ZnO nanowires exhibited a hex...
Improving the platinum (Pt) mass activity for the oxygen reduction reaction (ORR) should optimize both the specific activity and the electrochemical active surface area (ECSA). We show that solution-synthesized Pt/NiO core/shell nanowires can be readily converted into PtNi alloy nanowires through a post-synthesis thermal annealing process, and then transformed into jagged Pt nanowires via an el...
Cobalt-nickel (Co-Ni) binary alloy nanowires of different compositions were co-deposited in the nanopores of highly ordered anodic aluminum oxide (AAO) templates from a single sulfate bath using alternating current (AC) electrodeposition. AC electrodeposition was accomplished without modifying or removing the barrier layer. Field emission scanning electron microscope was used to study the morph...
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