نتایج جستجو برای: epitaxy

تعداد نتایج: 8455  

2017
Marjorie A. Langell G. A. Carson Marjorie Langell

2012
Sergey Khromov Bo Monemar V. Avrutin Xing Li H. Morkoç Lars Hultman Galia Pozina S. Khromov B. Monemar L. Hultman G. Pozina

2017
Guangliang Hu Chunrui Ma Wei Wei Zixiong Sun Lu Lu Shao-Bo Mi Ming Liu Beihai Ma Judy Wu Chun-lin Jia

2013
V. S. Amaral A. A. C. S. Lourenço J. P. Araújo A. M. Pereira J. B. Sousa Yves Idzerda P. B. Tavares J. M. Vieira J. C. Soares

2017
C. N. Borca Takashi Komesu Peter A. Dowben D. Ristoiu Hae-kyung Jeong P. A. Dowben J. P. Nozières

2007

Laser is a powerful tool in many applications. It is especially useful in material processing. Thanks to it's narrow frequency bandwidth, coherence and high power density this instrument is used in many scientific research works and experiments. Often the light beam is intense enough to vaporize the hardest and most heat resistant materials. Besides, due to its high precision, reliability and s...

Journal: :Nature materials 2015
P Krogstrup N L B Ziino W Chang S M Albrecht M H Madsen E Johnson J Nygård C M Marcus T S Jespersen

Controlling the properties of semiconductor/metal interfaces is a powerful method for designing functionality and improving the performance of electrical devices. Recently semiconductor/superconductor hybrids have appeared as an important example where the atomic scale uniformity of the interface plays a key role in determining the quality of the induced superconducting gap. Here we present epi...

2005
Paul H. Langer Joseph I. Goldstein

In order to calculate the redis tr ibut ion of boron in silicon by both diffusion and autodoping dur ing epitaxial growth, certain materials parameters must be known as a function of temperature. The parameters are the diffusion coefficient of boron, the evaporat ion coefficient of boron from silicon, and the silicon evaporation rate in a hydrogen ambient. The value of the diffusion coefficient...

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