Semiconductor nanocrystals are promising for use in cheap and highly efficient solar cells. A high efficiency can be achieved by carrier multiplication (CM), which yields multiple electron-hole pairs for a single absorbed photon. Lead chalcogenide nanocrystals are of specific interest, since their band gap can be tuned to be optimal to exploit CM in solar cells. Interestingly, for a given photo...

[email protected] Abstract – The CdO thin films were deposited using NaOH as the complexing agent by Successive Ionic Layer Adsorption and Reaction (SILAR) method. The UV-VIS-NIR spectroscopy was used for film characterization. The deposited CdO thin film shows high absorbance in the UV region and low in the visible to near IR region of the spectroscopy. The energy band gap of the deposi...

The temperature dependence of the band gap of semiconducting carbon nanotubes was measured for ten different nanotube species. The unprecedented effectiveness in avoiding the effect of external strain, or any other effects originating from the surrounding environment, lead to an accurate measurement of the band gap temperature dependence, giving fundamental insight into the nanotube electron-ph...

GaNP /GaP is promising for yellow-amber-red light emitting diodes LEDs . In this study, pressure and temperature dependent electroluminescence and photocurrent measurements on bulk GaP /GaN0.006P0.994 /GaP LED structures are presented. Below 110 K, emission is observed from several localized nitrogen states. At room temperature, the band-edge energy increases weakly with pressure at a rate of +...

Cu and Ni ferrites as the semiconductor materials were synthesized by a microwave sol-gel auto-combustion method. Two cationic surfactants, sodium dodecyl sulfate (SDS) and cetyltrimethylammonium bromide (CTAB), were applied and the influence of surfactants on the properties of the Cu and Ni ferrite particles was studied. The samples were characterized by X-ray powder diffraction (XRD) pattern,...

We present the quasiparticle band structure of ZnO in its zincblende (ZB) and rocksalt (RS) phases at the Γ point, calculated within the GW approximation. The effect of the p-d hybridization on the quasiparticle corrections to the band gap is discussed. We compare three systems, ZB-ZnO which shows strong p-d hybridization and has a direct band gap, RS-ZnO which is also hybridized but includes i...

We present measurements of the two-photon absorption coefficients beta(2) of 10 different semiconductors having band-gap energies between 1.4 and 3.7 eV. We find that beta(2) varies as E(g)(-3), as predicted by theory. In addition, the absolute values of beta(2) agree with theory, which includes the effect of nonparabolic bands, the average difference being less than 26%. This agreement permits...

Water splitting under the influence of solar light on semiconducting electrodes Im‐ mersed in aqueous electrolyte is a potentially clean and renewable source for hydrogen fuel production. Its efficiency depends on relative position of the band gap edges (the visible light interval between infrared and ultraviolet (UV) ranges of electromagnetic spectrum corresponds to gap widths 1.5–2.8 eV) acco...

Claudia Rödl,1,2,3 Kari O. Ruotsalainen,4,5 Francesco Sottile,1,3 Ari-Pekka Honkanen,4 James M. Ablett,5 Jean-Pascal Rueff,5,6 Fausto Sirotti,5 Roberto Verbeni,7 Ali Al-Zein,7,8 Lucia Reining,1,3 and Simo Huotari4 1Laboratoire des Solides Irradiés, École polytechnique, CNRS, CEA, Université Paris-Saclay, 91128 Palaiseau cedex, France 2Institut für Festkörpertheorie und -optik, Friedrich-Schille...

In this paper, properties of reflection phase in one-dimensional quaternary photonic crystals combining dispersive meta-materials and positive index materials are investigated by transfer matrix method. Two omnidirectional band gaps are located in the band structure of considered structure. However, we limit our studies to the frequency range of the second wide band gap. We observe that the val...