We report on the present state of commissioning of the cryogenic electrostatic trap for fast ion beams (CTF) at the Max-Planck-Institut für Kernphysik in Heidelberg. The device has recently passed a cryogenic test, during which the trap was cooled down by 1.8 K superfluid helium. No leaks of the helium supply system were observed, the temperature below 10 K was reached, and the required positio...

We present the design and fabrication of a tunable optical buffer device based on III-V semiconductor platform for telecommunication applications. The device comprises two indium phosphide suspended parallel waveguides with cross sectional dimension of 200 nm by 300 nm, separated by an air gap. The gap between the waveguides was designed to be adjustable by electrostatic force. Our simulation e...

The properties of two-dimensional (2D) electronic systems are often effectively controlled using electrostatic gating. geometry such field effect devices influences the effectiveness gate and carrier density profile in 2D device. Here, we analyze gate-induced spatial variations lateral patterned ${\mathrm{LaAlO}}_{3}/{\mathrm{SrTiO}}_{3}$ devices. We model electrostatics interface Thomas-Fermi ...

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The paper focuses on two particular phenomena which contribute to the poor collection efficiency of fine particles (from ~ 0.1 μm to ~ 2 μm) by electrostatic precipitators (ESPs). Firstly, the influence of turbulence on collection rate is considered as well as the fact that the charged fine particles are expected to give the main contribution in the generation of small eddies in ESPs. Experimen...

In this paper, results of Particle Image Velocimetry (PIV) measurements of the electrohydrodynamic (EHD) flow velocity fields in an electrostatic precipitator (ESP) are presented. The measurements were carried out for various densities of submicron dust. The ESP was an acrylic parallelepiped with a wire discharge electrode and two plate collecting electrodes. The positive DC voltage was applied...

This work puts forward the theoretical observation that open circuit voltage (V oc ) loss at illuminated wide band gap side of a PN heterostructure is directly proportional to discontinuity heterostructure. photovoltage an effect photocarrier confinement and cannot be detected device terminals as separate measurable voltage. Wrongly illuminating heterojunction solar cell results in excess build...

Analysis of the electrostatic characteristics and the gate capacitance of typical nanostructured carbon nanotube field effect transistors (CNTFETs) were performed numerically. A previously developed parallelized electrostatic Poisson’s equation solver (PPES) is employed, coupled with a parallel adaptive mesh refinement (PAMR) to improve the numerical accuracy near the region where variation of ...