The electro-thermomechanical modeling study of the High Electron Mobility Transistor (HEMT) has been presented, all necessary equations are detailed and coupled. This proposed by finite element method using Comsol multiphysics software, allowed to behaviour transistor observe different degradations in structure component. Then, an optimization is avoid failures transistor. In this work, we have...

This paper investigates an uncommon technique by using the influence of random function (Weiner process function), on a two-temperature problem, at free surface semiconducting medium, photo-thermoelasticity theory. Using Silicon material as example medium under magnetic field, novel model can be formulated. To make problem more logical, randomness Weiner is aged to governing stochastic equation...