As the continuous down scaling of MOSFET device is required to increase the speed and packaging density of it, but it reduces the device characteristics in terms of short channel effect and reverse leakage current. At present, the single gate MOSFET reaching its scaling limit. These limitations associated with scaling give birth to number of innovative techniques which includes the use of diffe...

We demonstrate atomic-layer-deposited (ALD) high-k dielectric integration on 2-D layer-structured molybdenum disulfide (MoS2) crystals and MoS2 dual-gate n-channel MOSFETs with ALD Al2O3 as the gate dielectric. Our C–V study of MOSFET structures shows good interface between 2-D MoS2 crystal and ALD Al2O3. Maximum drain currents using back gates and top gates are measured to be 7.07 and 6.42 mA/...

We present a study on the metal–graphene contact properties. Utilizing a dual-gate field-effect transistor device, an energetic separation between the Fermi level and the Dirac point in the contact areas can be adjusted deliberately by applying an appropriate front-gate voltage that acts only on the channel. This front-gate voltage is compensated by an opposite large-area backgate voltage, ther...

Polycrystalline silicon (poly-Si) has been used as the gate material for MOSFETs for several decades. This is because it is highly compatible with CMOS processing, and its work function can be selectively modified by ion implantation of the appropriate dopants. The gate-depletion effect, which increases the equivalent SiO2 thickness (EOT) of the gate dielectric by several Angstroms and thereby ...

A dual-gate anti-ambipolar transistor (AAT) with a two-dimensional ReS2 and WSe2 heterojunction is developed. The characteristic ?-shaped transfer curves yielded by the bottom-gate voltage are effectively controlled top-gate voltage. This feature applied to logic operations, bottom- voltages acting as two input signals drain current (Id) monitored an output signal. Importantly, single AAT exhib...

In this paper, a dual-loop gate antenna is designed to generate the magnetic field distribution in various directions. It is applied to Radio Frequency Identification (RFID) systems for animal identification operating at the low frequency (LF) band of 125 kHz and 134.2 kHz. The percentage of volume of magnetic field intensity is introduced and used as a figure of merit in the design. The optimu...