نتایج جستجو برای: doped δ
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In this article, the dielectric properties of poly (9-vinylcarbazole) (PVK) and ferrocene-doped PVK thin films are studied. The were grown by isothermal solution casting technique. Dielectric studied as function ferrocene concentration, frequency, temperature. relative permittivity (ε′) is increased with increasing percentage (~1%) due to free charge carriers. decreases for higher (~2%). Howeve...
فرض کنید δ یک مجتمع سادکی با بعد 1-d و بردار آن باشد. ثابت میکنیم که اگر δ در شرط سر (sr) صدق کند، آنگاه به ازای هر i و r با شرط مجموع نامنفی است. بعلاوه نشان می دهیم که اگر حلقه استنلی-رایزنر مجتمع سادکی مجموعه های مستقل یک گراف دو بخشی g در شرط سر (s2) صدق کند آنگاه g کوهن-مکالی است. این نشان می دهد که هم ارزی خاصیت کوهن- مکالی و شرط s2 برای گراف های چوردال درست است.
Sr-Co containing perovskite oxides are prospective air electrode candidates for reversible solid oxide cells (RSOCs). However, their efficiencies limited by Sr segregation and the high thermal expansion coefficient (TEC) of Co-based perovskites. Herein, La0.6Ca0.4Fe08Ni0.2O3−δ (LCaFN) is tailored as an Sr-Co-free highperformance RSOCs. Compared with La0.6Sr0.4Fe0.8Ni0.2O3−δ (LSFN) La0.6Sr0.4Co0...
The oxygen exchange activity of mixed conducting oxide surfaces has been widely investigated, but a detailed understanding of the corresponding reaction mechanisms and the rate-limiting steps is largely still missing. Combined in situ investigation of electrochemically polarized model electrode surfaces under realistic temperature and pressure conditions by near-ambient pressure (NAP) XPS and i...
Strontium-ferrite-based perovskites as cobalt-free cathodes for intermediate-temperature solid oxide fuel cells (IT-SOFCs) have been analysed employing structural, stability and electrochemical studies. Neutron diffraction of SrFeO3-δ SrFe0.9Mo0.1O3-δ prepared by a Pechini method confirmed that undergoes phase transition from tetragonal to cubic symmetry at 300–400 °C, whereas Mo-doping stabili...
An upper estimate of the activation barrier Ea, overcome by boron atom during its adsorption on singular face unalloyed diamond, has been obtained using quantum chemistry methods. This process is connected with formation boron-doped δ-layer in which an integral part diamond transistor. The Ea was found to be approximately 6–7 eV. It correspondent order magnitude floating electrode potential dro...
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