نتایج جستجو برای: dielectric film

تعداد نتایج: 127390  

2016
P. L. Poole A. Krygier G. E. Cochran P. S. Foster G. G. Scott L. A. Wilson J. Bailey N. Bourgeois C. Hernandez-Gomez D. Neely P. P. Rajeev R. R. Freeman D. W. Schumacher

We describe the first demonstration of plasma mirrors made using freely suspended, ultra-thin films formed dynamically and in-situ. We also present novel particle-in-cell simulations that for the first time incorporate multiphoton ionization and dielectric models that are necessary for describing plasma mirrors. Dielectric plasma mirrors are a crucial component for high intensity laser applicat...

2013
Teresa Oh

SiOC films prepared by the capacitively coupled plasma chemical vapor deposition were analyzed by Fourier Transform Infrared spectroscopy, nanoindentation, capacitance and Xray diffraction patterns to observe the crystallinity and chemical shift of SiOC. The capacitance decreased after annealing process, and the dielectric constant was also decreased by annealing due to the reduction of polariz...

2010
Ogyun Seok Young-Hwan Choi Minki Kim Jumi Kim Byungyou Hong Min-Koo Han

AlGaN/GaN Schottky Barrier Diodes (SBDs) employing the Diamond-like Carbon (DLC) passivation was proposed. The reverse blocking characteristics of the AlGaN/GaN SBD is degraded by the electron trapping effect through the surface trap states. In order to suppress the electron trapping effect and increase the breakdown voltage of AlGaN/GaN SBDs, the surface passivation or treatment should be perf...

Journal: :ACS applied materials & interfaces 2012
Qingshuo Wei Eunyoung You Nicholas R Hendricks Alejandro L Briseno James J Watkins

The fabrication of low-voltage flexible organic thin film transistors using zirconia (ZrO(2)) dielectric layers prepared via supercritical fluid deposition was studied. Continuous, single-phase films of approximately 30 nm thick ZrO(2) were grown on polyimide (PI)/aluminum (Al) substrates at 250 °C via hydrolysis of tetrakis(2,2,6,6-tetramethyl-3,5-heptane-dionato) zirconium in supercritical ca...

Journal: :Journal of power sources 2014
Xuezhen Huang Xi Zhang Hongrui Jiang

To study the fundamental energy storage mechanism of photovoltaically self-charging cells (PSCs) without involving light-responsive semiconductor materials such as Si powder and ZnO nanowires, we fabricate a two-electrode PSC with the dual functions of photocurrent output and energy storage by introducing a PVDF film dielectric on the counterelectrode of a dye-sensitized solar cell. A layer of ...

2008
Garrett D. Cole Elaine Behymer Lynford L. Goddard Tiziana C. Bond

The authors present a simplified fabrication method for the creation of free-standing dielectric mirrors for use in monolithic wavelength tunable surface-normal photonic devices, including vertical-cavity surface emitting lasers. This process utilizes a nonplasma dry etching process, based on the noble gas halide, xenon difluoride XeF2 , to remove an inorganic sacrificial film comprised of low-...

2005
I-Chun Cheng Alexis Kattamis Ke Long James C. Sturm Sigurd Wagner

I-Chun Cheng Alexis Kattamis Ke Long James C. Sturm Sigurd Wagner Abstract — Mechanical stress in hydrogenated amorphous-silicon (a-Si:H) thin-film transistors (TFTs) is becoming an important design parameter, especially when the TFTs are made on compliant substrates. Excessive stress always has been avoided to prevent film fracture and peeling. Now, attention is turning to the effects of stres...

Journal: :Microelectronics Reliability 2008
Jinyu Jason Ruan E. Papandreou Mohamed Lamhamdi Matroni Koutsoureli Fabio Coccetti Patrick Pons George J. Papaioannou Robert Plana

0026-2714/$ see front matter 2008 Elsevier Ltd. A doi:10.1016/j.microrel.2008.06.047 * Corresponding author. Address: LAAS CNRS, 7, Toulouse Cedex 4, France. Tel.: +33 561337900; fax: E-mail address: [email protected] (G. Papaioannou) The paper investigates the effect of 5 MeV alpha particle irradiation in RF MEMS capacitive switches with silicon nitride dielectric film. The investigation includ...

2012
En Yang Hoan Ho David E. Laughlin Jian-Gang Zhu

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Journal: :SIAM Journal of Applied Mathematics 2005
Yujin Guo Zhenguo Pan M. J. Ward

The pull-in voltage instability associated with a simple MEMS device, consisting of a thin dielectric elastic membrane supported above a rigid conducting ground plate, is analyzed. The upper surface of the membrane is coated with a thin conducting film. In a certain asymptotic limit representing a thin device, the mathematical model consists of a nonlinear partial differential equation for the ...

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