نتایج جستجو برای: detectivity
تعداد نتایج: 428 فیلتر نتایج به سال:
Gourd-shaped hole array germanium (Ge) vertical p-i-n photodiodes were designed and demonstrated on a germanium-on-insulator (GOI) substrate with the excellent responsivity of 0.74 A/W specific detectivity 3.1 × 10 cm·Hz 1/2 /W. It is calculated that gourd-shaped design provides higher optical absorption compared to cylinder-shaped design. As result, external quantum efficiency for photodetecto...
Photodiodes have found wide practical applications as sensing and information transmission technology in different environments. Viktor Brus co-workers (article number 2202028) report a novel high-performance UV-vis-NIR heterojunction photodiode based on radiation-resistant functional semiconductor materials: TiN ‘window’ layer CdZnTe photoactive layer. This work pushes the current detectivity–...
Whatever man’s ultimate goals in exploring the solar system may be, to satisfy curiosity, to locate additional habitats for the human race, or something else, achieving these objectives involves a common need. This is to map, in as much detail as possible, the morphology and constituents of the surfaces of all the planetary bodies and to determine the constituents and dynamics of the atmosphere...
In article number 2203001, Viktor V. Brus and co-workers report on the advanced radiation resistance of high-performance self-powered UV–Vis–NIR (300–800 nm) multi-component hybrid perovskite photodiodes. The devices were exposed to a short impulse 170 keV proton irradiation with fluence up 1013 protons cm−2. Even heavily proton-irradiated photodiodes retain 75% their initial photoelectric char...
Recently, high-performance GeSn photodiodes (PDs) with external light illuminated on the device's top surface have been demonstrated various platforms. However, for image sensing systems a focal-plane array (FPA), front-illuminated sensors usually suffer from area limitations. Here, we report back-illuminated Ge0.92Sn0.08/Ge multiple-quantum-well (MQW) p-i...
Zinc thin films deposited on (n-type)silicon at 510o C with oxidation times (10,20,30,35) sec have been oxidized. by thermal diffusion method using heater instead of conventional furnace .It is found that we can get zinc oxide outoxegen and closed farneces rapidly. The electrical properties in dark show the detector shottky diode, best time to obtain 35 sec, ideality factor 3.3 a work function ...
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