نتایج جستجو برای: deep submicron

تعداد نتایج: 213713  

2013
Narayan Upadhyay

The trend in VLSI and system design is moving away from high speed to low power due to the rapid growth in the portable consumer electronics market. The technology evolution of deep submicron (DSM) will be able to manage the needs and demands of future computing world. A rapid growth of future computing have led to challenges of very deep submicron (DSM) regime. Here, the leakage power plays a ...

2014
Sudeep Bhattacharya Devesh Tiwari

As CMOS electronic devices are continuously shrinking to nanometer regime, leads to increasing the consequences of short channel effects and variability due to the process parameters which lead to cause the reliability of the circuit as well as performance. To solve these issues of CMOS, FINFET is one of the promising and better technologies without sacrificing reliability and performance for i...

2007
C.-M. Hsu M. H. Perrott

Recent advances in frequency synthesizer architectures have formed the groundwork for a very exciting and active area of research. On the one hand, the need for a wider-bandwidth fractional-N synthesizer has inspired researchers to develop phase noise cancellation techniques to avoid tradeoffs between noise performance and synthesizer bandwidth [1], as shown in Figure 1. On the other hand, the ...

2015
W. P. Zhou H. Y. Hua P. C. Sun Y. X. Zhao

The purpose of the present study was to develop the Solutol HS15-based doxorubicin submicron emulsion with good stability and overcoming multi-drug resistance. In this study, we prepared doxorubicin submicron emulsion, and examined the stability after autoclaving, the in vitro cytotoxic activity, the intracellular accumulation and apoptpsis of doxorubicin submicron emulsion in MCF-7/ADR cells. ...

2011
J. J. Gu Y. Q. Wu Peide D. Ye P. D. Ye

Recently, encouraging progress has been made on surface-channel inversion-mode In-rich InGaAs NMOSFETs with superior drive current, high transconductance and minuscule gate leakage, using atomic layer deposited (ALD) high-k dielectrics. Although gate-last process is favorable for high-k/III–V integration, high-speed logic devices require a self-aligned gate-first process for reducing the parasi...

2009
Dipanjan Sengupta

Application of Generalized Power Delay Metrics to Supply and Threshold Selection in Deep Submicron CMOS by Dipanjan Sengupta Power consumption has become as important as performance in todays deep submicron designs. As a result, high-level techniques and models must be developed to evaluate design changes in terms of power (energy) and performance tradeoff early in the design process. Recently,...

Journal: :IEEJ Transactions on Electronics, Information and Systems 1990

Journal: :International Journal of VLSI Design & Communication Systems 2018

نمودار تعداد نتایج جستجو در هر سال

با کلیک روی نمودار نتایج را به سال انتشار فیلتر کنید