This paper demonstrates a new methodology for bringing accurate substrate resistance modeling into circuit level ESD simulation. The impact of layout and process variations on the effective substrate resistance of deep sub-micron ESD devices is analyzed and modeled using a quasi mixed-mode approach. The substrate resistance simulated by this method shows good agreement with the values extracted...

Deep Sub-Micron SRAM Design for Ultra-Low Leakage Standby Operation by Huifang Qin Doctor of Philosophy in Engineering Electrical Engineering and Computer Sciences University of California, Berkeley Professor Jan M. Rabaey, Chair Suppressing the standby current in memories is critical in low-power design. By lowering the supply voltage (VDD) to its standby limit, the data retention voltage (DRV...

1 This work is supported by National Science Foundation 60376019. Abstract--The widespread application of deep sub-micron and multilayer routing techniques makes the interconnection parasitic influence become the main factor to limit the performance of VLSI circuits. Parallel direct boundary element calculation of three-dimensional (3-D) resistance and capacitance is an important method for fas...

In this study consideration is made of the common mode (CM) behavior of two-stage fully differential amplifiers in voltage feedback connection. In particular, interaction between internal CMFB circuitry and the external feedback network is investigated in order to highlight a possible operating point instability condition, due to the presence of a positive feedback loop. Two alternative CMFB to...

This paper presents a new voltage comparator design called Quantum Voltage (QV) comparator for the next generation deep sub-micron low voltage CMOS flash A/D converter (ADC). Unlike the traditional differential voltage comparators designed to minimize input-offset voltage error due to the mismatches in a differential transistor pair, the QV comparators are designed to optimize the inputoffset v...

The wireless industry has evolved to enable high bit-rate communications, and the WCDMA system has emerged as a 3G standard. There is enormous pressure to reduce the size, cost, and power consumption of the mobile phone. While digital circuits have experienced tremendous power saving with the progress of deep sub-micron processes, the analog/RF sections remain the bottleneck in reducing the dc ...

The comparison and analysis of SRAM cells provides vital information for trading of design parameters to meet stringent requirements in the deep sub micron ranges. Initially this paper introduces to SRAM cells, then cell parametric dependences are investigated and finally simulation results of the same are shown. An 11T SRAM cell is compared with the conventional 6T SRAM cell for SNM, Power, DR...

Nowadays, mechanical designers and engineers of elastic structures at ultra-small scales face an interesting challenge; traditional flexures with several components, mechanical joints/ welds and linkages are almost impossible to manufacture with existing microsystem fabrica‐ tion technologies. Therefore, the majority of mechanical components, elements and building blocks are based on micro/nano...

Urchin-like NiCo2S4 sub-micron spheres integrated with nano-sized and micro-sized structures, which were synthesized via a facile one-pot method, deliver efficient electrocatalytic activities for oxygen reduction and evolution reactions. The excellent electrocatalytic property of NiCo2S4 sub-micron spheres is originated from their unique urchin-like microstructure, composition and d-electronic ...