نتایج جستجو برای: czochralski method
تعداد نتایج: 1630440 فیلتر نتایج به سال:
Numerical analysis of global heat transfer with coupled thermal radiation and heat conduction is investigated in Czochralski silicon crystal growth furnace with curved diffuse and specular surfaces. The ®nite element method and the radiation element method are adopted to solve the global heat transfer and the radiative heat exchange, respectively. The emphasis focuses on the discussion of the i...
This paper is devoted to the study of a stationary problem consisting of the Boussinesq approximation of the Navier–Stokes equations and two convection–diffusion equations for the temperature and concentration, respectively. The equations are considered in 3D and a velocity–pressure formulation of the Navier–Stokes equations is used. The problem is complicated by nonstandard boundary conditions...
Abstract Dy 3+ -doped YCa 4 O(BO 3 ) (Dy:YCOB) crystal was successfully grown by the Czochralski technique. The absorption cross section at 453 nm 0.28 × 10 –21 cm 2 , that is related to 6 H 15/2 ? I transition. Judd-Ofelt parameters ? t (t = 2, 4, 6) were 1.62 –20 0.10 0.41 respectively. emission assigned transition F 9/2 13/2 1.02 . energy level’s fluorescence lifetime 900 ? s.
In silicon crystals manufactured by the Czochralski method, oxygen is incorporated as a contaminant originating primarily from dissolution of quartz crucible used to contain molten feedstock. The can be found either interstitials, agglomerates, or oxide particles. Particular kinds agglomerates are known lead formation thermal donors—electronic states in bandgap base material. These act sites fo...
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