The wide application of graphene in the industry requires direct growth films on silicon substrates. In this study, we found a possible technique to meet requirement above. Multilayer thin (MLG) were grown without catalyst Si/SiO2 using pulsed laser deposition (PLD). It was that minimum number pulses required produce fully covered (uninterrupted) samples is 500. This resulted contain ~5 layers ...

For wafer sizes in state-of-the-art semiconductor manufacturing ranging up to 300 mm, the uniformity of processes across the wafer becomes a very important issue. We present a fully three-dimensional model for the feature scale simulation of continuum transport and reaction determined high-pressure chemical vapor deposition processes suitable for the investigation of such nonuniformities. The n...

Two sets of hydrogenated microcrystalline silicon thin-film samples were prepared by Plasma Enhanced Chemical Vapor Deposition (PECVD) technique at different deposition conditions of excited power and pressure. The correlation between the crystalline volume fraction for the samples determined from Raman spectra and the excited power, pressure, absorption coefficient, refractive index and optica...

The simultaneous generation of dust during the deposition of semiconducting thin films by radio frequency plasma enhanced chemical vapor deposition has so far been regarded as a troublesome by-product. However, we present results from recent microstructural investigations of carbonaceous dust particles from a methane precursor that demonstrate that the technique may be suited to generating full...

Electrochemical Properties of Nonstoichiometric LiNi0.5Mn1.5O4− Thin-Film Electrodes Prepared by Pulsed Laser Deposition H. Xia, Y. S. Meng,* L. Lu, and G. Ceder* Advanced Materials for Microand Nano-System, Singapore-MIT Alliance, Singapore 117576, Singapore Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA Department of...

We have studied the effect of substrates [glass and Si(10 0)], of Ni thickness (tNi) and of the deposition rate [v1 1⁄4 13nm/min and v2 1⁄4 22nm/min] on the structural and electrical properties of evaporated Ni thin films. The Ni thickness, measured by the Rutherford backscattering (RBS) technique, ranges from 28 to 200nm. From X-ray diffraction, it was found that all samples are polycrystallin...