CVD graphene devices on stacked CVD hexagonal boron nitride (hBN) are demonstrated using a novel low-contamination transfer method, and their electrical performance is systematically compared to devices on SiO(2). An order of magnitude improvement in mobility, sheet resistivity, current density, and sustained power is reported when the oxide substrate is covered with five-layer CVD hBN.

Thermal transport and phonon-phonon coupling in monolayer hexagonal boron nitride (h-BN) under equibiaxial strains are investigated from first principles. Phonon spectra at elevated temperatures have been calculated from perturbation theory using the third-order anharmonic force constants. The stiffening of the out-of-plane transverse acoustic mode (ZA) near the Brillouin zone center and the in...

Two-dimensional (2D) hexagonal boron-nitride oxide (h-BNO) is a structural analogue of graphene oxide. Motivated by recent experimental studies of graphene oxide, we have investigated the chemical oxidation of 2D h-BN sheet and the associated electronic properties of h-BNO. Particular emphasis has been placed on the most favorable site(s) for chemisorption of atomic oxygen, and on the migration...

The damage threshold of fused silica in vacuum and air before or after 355nm laser irradiation is measured. The structure and defects of fused silica has been studied by means of FTIR (Fourier transform infrared), Raman and Fluorescence spectroscopy. The primary defect species are oxygen vacancies (such as Si–Si bonds), non-bridging oxygen hole center (NBOHC), oxygen interstitials (peroxy radic...

in the present research, nonlinear vibration in a coupled system of boron-nitride nano-tube reinforced composite (bnntrc) oil pipes is studied. single-walled boron-nitride nano-tubes (swbnnts) are arranged in a longitudinal direction inside poly-vinylidene fluoride (pvdf) matrix. damping and shearing effects of surrounded medium are taken into account by visco-pasternak model. based on piezoele...

Wafers with 1 μm LPCVD silicon-rich nitride layers have been successfully direct bonded to silicon-rich nitride and boron-doped silicon surfaces. A chemical–mechanical polishing treatment was necessary to reduce the surface roughness of the nitride before bonding. The measured surface energies of the room-temperature bond were comparable to values found for Si–Si hydrophilic bonding. A mechanis...

Alexander F. Goncharov,1,2 Jonathan C. Crowhurst,2 John K. Dewhurst,3 Sangeeta Sharma,4 Chrystele Sanloup,5 Eugene Gregoryanz,1,6 Nicolas Guignot,7 and Mohamed Mezouar7 1Geophysical Laboratory, Carnegie Institution of Washington, 5251 Broad Branch Road NW, Washington, DC 20015, USA 2Lawrence Livermore National Laboratory, University of California, 7000 East Avenue, Livermore, California 94551, ...

In this study, epoxy-cubic boron nitride composites are fabricated, and their dielectric response is investigated. They exhibit the same trend as epoxy composites reinforced with other filler types. Thus, at low filler concentrations, they exhibit a lower relative permittivity than neat epoxy. As the fill grade further increases, the relative permittivity of the composites increases as well. It...