This paper presents an analysis of the motion of an neutral impurity species in a nanometer scale 4He cluster, extending a previous study of the dynamics of an ionic impurity. It is shown that for realistic neutral impurity–He potentials, such as those of SF6 and OCS, the impurity is kept well away of the the surface of the cluster by long range induction and dispersion interactions with He, bu...

This paper presents an analysis of the motion of a neutral impurity species in a nanometre scale He cluster, extending a previous study of the dynamics of an ionic impurity. It is shown that for realistic neutral impurity± He potentials, such as those of SF6 and OCS, the impurity is kept well away from the surface of the cluster by long range induction and dispersion interactions with He, but t...

The formation of clusters impurity atoms in the crystal lattice semiconductor materials is great interest. nanoclusters with controlled parameters can serve as basis for technology creating and obtaining bulk nanostructured material. This paper shows experimental results obtained, well proposed physical model structure nickel atomic clusters. It shown that move migrate monosilicon an anomalousl...

Using an asymptotic solution of the M -impurity thermodynamics of a dilute s-d system, the impurity energy and impurity heat capacity ∆C(T ) are derived for dilute magnetic alloys with spin 1/2 and spin 3/2 impurities. The parameters which enter ∆C are adjusted to fit experimental data on impurity heat capacity of CuCr and (La1−xCex) Al2. Agreement is satisfactory for CuCr, at temperatures belo...

in this paper, the electronic eigenstates and energy spectra of single and two-interacting electrons confined in a concentric double quantum rings with a perpendicular magnetic field in the presence of         on-center donor and acceptor impurities are calculated using the exact diagonalization method. for a single electron case, the binding energy of on-center donor and acceptor impurities ar...

Formation of p + contact on germanium is important for its applications in diode detector and other electronic devices. In this work, thermally deposited Al Ge crystal annealed at 350 °C followed by slow cooling solid-state regrowth Al-Ge . Depth profile analysis secondary ion mass spectrometry (SIMS) carried out to investigate the occurrence along depth regrown layer. Evidence observed due int...