نتایج جستجو برای: conventional dielectric

تعداد نتایج: 296139  

F. Hojjat Kashani, Salimnejad,

The development of numerical techniques now permits us to analyze complex structures such as dielectric resonator filters and planar passive elements for coplanar monolithic microwave integrated circuits. In this paper, we describe a novel method for designing dielectric resonator filters. Then a Chebychev band pass filter is designed by coaxially placing high-Q TM01Q dielectric resonators ...

پایان نامه :دانشگاه تربیت معلم - تهران - دانشکده علوم 1393

in this thesis, structural, electronical, and optical properties of inverse pervskite(ca3pbo) in cubic phase have been investigated.the calculation have been done based on density functional theory and according to generalized gradiant approximate (gga) as correlating potential. in order to calculate the configurations, implementing in the wien2k code have been used from 2013 version. first of ...

2013
Aurélien Besnard Nicolas Martin Luc Carpentier Fabrice Sthal Jean-Yves Rauch Aurelien BESNARD

Titanium thin films were deposited by dc magnetron sputtering. The GLancing Angle Deposition (GLAD) method was implemented to prepare two series of titanium films: perpendicular and oriented columnar structures. The first one was obtained with a conventional incidence angle of the sputtered particles ( = 0°), whereas the second one used a grazing incidence angle = 85°. Afterwards, films were an...

2010
Ruth A. Schlitz KunHo Yoon Lisa A. Fredin Young-geun Ha Mark A. Ratner Tobin J. Marks Lincoln J. Lauhon

The effect of thermal annealing on leakage current and dielectric breakdown in self-assembled nanodielectric (SAND)metal-insulator-semiconductor (MIS) devices is investigated. Annealing at temperatures of g300 C for 120 s in a reducing atmosphere significantly reduces the leakage current density at typical operating voltages (Vg=3V)while greatly narrowing the distribution of breakdown voltages....

Journal: :the modares journal of electrical engineering 2011
mona ghassemi hossin mohseni kaveh niayesh amir abbas shayegani akmal

although in recent two decades, the concept of dielectric barrier discharges (dbds) have been developed in ozone production well, air pollution control, plasma screens and control of chemical, and biological and medical processes, employment of this concept for high voltage applications to improve insulation performance as an alternative to the pressurized gas-insulated systems (gis) utilizing ...

Journal: :transport phenomena in nano and micro scales 2013
m. rashidi huyeh n. moosavinejad

nanocomposite materials, including noble metal nanoparticles embedded in a dielectric host medium, are interesting because of their optical properties linked to surface plasmon resonance phenomena. for studding of nonlinear optical properties and/or energy transfer process, these materials may be excited by ultrashort pulse laser with a temporal width varying from some femtoseconds to some hund...

Journal: :Photonics 2021

The photonic nanojet is a non-resonance focusing phenomenon with high intensity and narrow spot that can serve as powerful biosensor for in vivo detection of red blood cells, micro-organisms, tumor cells blood. In this study, we first demonstrated modulation by utilizing spider-silk-based metal–dielectric dome microlens. A cellar spider was employed extracting the silk fiber, which possesses li...

Journal: :Optics express 2012
Hanhong Gao Baile Zhang Steven G Johnson George Barbastathis

We design an all-dielectric Lüneburg lens as an adiabatic space-variant lattice explicitly accounting for finite film thickness. We describe an all-analytical approach to compensate for the finite height of subwavelength dielectric structures in the pass-band regime. This method calculates the effective refractive index of the infinite-height lattice from effective medium theory, then embeds a ...

2008
J. P. Xu X. F. Zhang C. X. Li P. T. Lai C. L. Chan

The electrical characteristics of germanium p-metal– oxide–semiconductor (p-MOS) capacitor and p-MOS field-effect transistor (FET) with a stack gate dielectric of HfO2/TaOxNy are investigated. Experimental results show that MOS devices exhibit much lower gate leakage current than MOS devices with only HfO2 as gate dielectric, good interface properties, good transistor characteristics, and about...

نمودار تعداد نتایج جستجو در هر سال

با کلیک روی نمودار نتایج را به سال انتشار فیلتر کنید