نتایج جستجو برای: conduction band nonparabolicity

تعداد نتایج: 169137  

2011
Arpun R. Nagaraja Nicola H. Perry Thomas O. Mason Yang Tang Matthew Grayson Tula R. Paudel Stephan Lany Alex Zunger

Given the emerging role of oxide spinels as hole conductors, we discuss in this article the traditional vs. new methodologies of determining the type of conduction mechanism at play––localized polaronic vs. band-like transport. Applying (i) traditional small polaron analysis to our in-situ high temperature fourpoint conductivity and thermopower measurements, we previously found an activated mob...

Journal: :Physical chemistry chemical physics : PCCP 2014
A Hankin J C Alexander G H Kelsall

We revisit the fundamental constraints that apply to flat band potential values at semiconductor photo-electrodes. On the physical scale, the Fermi level energy of a non-degenerate semiconductor at the flat band condition, EF(FB), is constrained to a position between the conduction band, EC, and the valence band, EV,: |EC| < |EF(FB)| < |EV| throughout the depth of the semiconductor. The same co...

A. Asgari, F. Ghasemi, S. Razi,

In this paper, we present calculations for different parameters of quantum dot infrared photodetectors. We considered a structure which includes quantum dots with large conduction-band-offset materials (GaN/AlGaN). Single band effective mass approximation has been applied in order to calculate the electronic structure. Throughout the modeling, we tried to consider the limiting factors which dec...

Journal: :international journal of bio-inorganic hybrid nanomaterials 2015
s. fathi t. fanaei sheikholeslami

the output of a piezoelectric nanogenerator based on zno nanowire is largely affected by the shape of nanowire. in order to obtain mechanically stable nanogenerator with high performance, the investigation of mechanical and electrical characteristics related to the nanowires and materials used in nanogenerators are of great interest and significance. this paper presents the various behavior of ...

2015
Tao Hu Hui Zhang Jiemin Wang Zhaojin Li Minmin Hu Jun Tan Pengxiang Hou Feng Li Xiaohui Wang

Stacked two-dimensional titanium carbide is an emerging conductive material for electrochemical energy storage which requires an understanding of the intrinsic electronic conduction. Here we report the electronic conduction properties of stacked Ti3C2T2 (T = OH, O, F) with two distinct stacking sequences (Bernal and simple hexagonal). On the basis of first-principles calculations and energy ban...

2014
Eric Kai-Hsiang Yu Sungwoo Jun Dae Hwan Kim Jerzy Kanicki

We have developed a subgap density of states (DOS) model of amorphous In-Ga-Zn-O (a-IGZO) based on optical and electrical measurements. We study the optical absorption spectrum of the a-IGZO using UV-Vis spectroscopy. Together with the first-principles calculations and transient photoconductance spectroscopy from the literature, we determine that the valence band tail and deep-gap states are do...

Journal: :Journal of the American Academy of Audiology 1991
J C McDermott S A Fausti J A Henry R H Frey

The present study examines the reliability of masked high-frequency bone-conduction threshold measurements in 95 normal-hearing subjects. High-frequency pure-tone air-and bone-conduction thresholds were measured with a dedicated laboratory high-frequency auditory evaluation system using matched, modified Koss Pro/4X Plus earphones, and the Pracitronic KH 70/5 bone vibrator. A 400-Hz wide band m...

2002
ARGYRIOS C. VARONIDES

The maximum theoretical open circuit voltage of a solar cell is set by its builtin voltage. For amorphous silicon p-i-n cells, the position of the Fermi levels in the p-and ncontact regions are on the order of 0.4 eV and 0.2eV from their respective band edges, limiting the built-in voltage to Eg 0.6eV. We propose replacing the pand n regions by superlattices, in which the Fermi levels in the wi...

2016
Gaohua Liao Ning Luo Ke-Qiu Chen H. Q. Xu

We present a theoretical study of the electronic structures of freestanding nanowires made from gallium phosphide (GaP)-a III-V semiconductor with an indirect bulk bandgap. We consider [001]-oriented GaP nanowires with square and rectangular cross sections, and [111]-oriented GaP nanowires with hexagonal cross sections. Based on tight binding models, both the band structures and wave functions ...

2004
J. Versluys M. Burgelman

The presence of deep defects in CdSyCdTe thin film solar cells strongly affects the electrical properties and as a result the performance of the cells. Therefore, it is desirable to understand the role of these defect states. This paper describes the detection of electron traps in CdSyCdTe thin film solar cells using deep level transient spectroscopy. Two series of samples with a different acti...

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