Carbon nanotube field-effect transistors (CNTFETs) have been considered as a replacement for, or complement to, future semiconductor devices due to high mobility, low defect structure, and intrinsic nanometer scale of carbon nanotubes (CNTs). The great superiority in performance for CNTFETs vis-a-vis state-of-the-art silicon devices has attracted an intense research effort to explore their appl...

Single walled carbon nanotubes (SWCNTs) exhibit extraordinary electronic properties that render it as an exciting candidate to be applied the active channel of high-performance nanotube field effect transistors (CNTFETs). The SWCNTs have been demonstrated dependent on tube intrinsic includes structural defects, chirality and diameter. Structural defects can affected by synthesis method therefor...

multiplier is one of the important components in many systems such as digital filters, digital processors and data encryption. improving the speed and area of multipliers have impact on the performance of larger arithmetic circuits that are part of them. wallace algorithm is one of the most famous architectures that uses a tree of half adders and full adders to increase the speed and reduce the...

Despite the advantages of ternary logic, it has suffered from excessive transistor count and limited noise margin. This work proposes an ultra-efficient nonvolatile flip-flop (FF) based on negative capacitance carbon nanotube field-effect transistors (NC-CNTFETs). By harnessing differential resistance effect in NC-CNTFETs, proposed design is similar to a conventional volatile binary FF regardin...

In this article, a new structure is presented for MOS (Metal Oxide Semiconductor)-like junctionless carbon nanotube field effect transistor (MOS-like J-CNTFET), in which dual material gate with different work-functions are used. In the aforementioned structure, the size of the gates near the source and the drain are 14 and 6 nm, respectively, and the work-functions are equal and 0.5 eV less tha...

Due to the high density and the low consumption power in the digital integrated circuits, mostly technology of CMOS is used. During the past times, the Metal oxide silicon field effect transistors (MOSFET) had been used for the design and implementation of the digital integrated circuits because they are compact and also they have the less consumption power and delay to the other transistors. B...

Electrolyte-gated field-effect transistors (EG-FETs) are widely used in the growing field of biochemical sensing applications, due to their manifold advantages, such as large specific capacitance, low operating voltage, and intrinsic signal amplification. In this work, carbon nanotube EG-FET (EG-CNTFET)-based sensors for ammonium (NH <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xli...

In this article, a new structure is presented for MOS (Metal Oxide Semiconductor)-like junctionless carbon nanotube field effect transistor (MOS-like J-CNTFET), in which dual material gate with different work-functions are used. In the aforementioned structure, the size of the gates near the source and the drain are 14 and 6 nm, respectively, and the work-functions are equal and 0.5 eV less tha...

We present the design and simulation of a single-walled carbon nanotube(SWCNT)-based field-effect transistor (FET) using Silvaco TCAD. In this paper, theself-heating effect modeling of the CNT MOSFET structure is performed and comparedwith conventional MOSFET structure having same channel length. The numericalresults are presented to show the self-heating effect on the I...