In this study, balanced and single ended class-E power amplifiers (PAs) were designed and realized for 3.5–3.8GHz band by using Gallium Nitride high electron mobility transistor (GaN HEMT). Realizations were made on low loss Rogers RT5880 dielectric material which has 0.254mm thickness and 2.2 dielectric constant. Proposed balanced class-E PA has approximately 20W (43 dBm) output power with 80%...

The nominal operating condition of Class E power amplifiers with parallel-connected nonlinear parasitic capacitance and linear capacitance at any duty ratio has been studied in this article. Basic design equations are derived analytically. Using these equations, the component values for ensuring nominal operation at any given duty ratio can be conveniently found. Furthermore, the design equatio...

In this study, design theory and analysis for the class E power amplifier (PA), considering the metal oxide semiconductor field effect transistor (MOSFET) parasitic input and output capacitances, are proposed. The input resistance and capacitances cause non-ideal input voltage at gate terminal, which affect the specifications of the class E PA. In the proposed study, non-linear drain-to-source,...

Abstract- A novel low-voltage two-stage operational amplifier employing resistive biasing is presented. This amplifier implements neutralization and correction common mode stability in second stage while employs capacitive dc level shifter and coupling between two stages. The structure reduces the power consumption and increases output voltage swing. The compensation is performed by simple mill...